Microchip Technology-JAN2N3737UB/TR - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Transistor Type:	NPN
Current - Collector (Ic) (Max):	1.5 A
Voltage - Collector Emitter Breakdown (Max):	40 V
Vce Saturation (Max) @ Ib, Ic:	900mV @ 100mA, 1A
Current - Collector Cutoff (Max):	10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	20 @ 1A, 1.5V
Power - Max:	500 mW
Frequency - Transition:	-
Operating Temperature:	-65°C ~ 200°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	3-SMD, No Lead
Supplier Device Package:	3-UB (2.9x2.2)

Microchip Technology JAN2N3737UB/TR