Microchip Technology-JAN2N1613L - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Transistor Type:	NPN
Current - Collector (Ic) (Max):	500 mA
Voltage - Collector Emitter Breakdown (Max):	30 V
Vce Saturation (Max) @ Ib, Ic:	1.5V @ 15mA, 150mA
Current - Collector Cutoff (Max):	10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	40 @ 150mA, 10V
Power - Max:	800 mW
Frequency - Transition:	-
Operating Temperature:	-65°C ~ 200°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-205AA, TO-5-3 Metal Can
Supplier Device Package:	TO-5

Microchip Technology JAN2N1613L