JAN1N6623/TR
  • Share:

Microchip Technology JAN1N6623/TR

Manufacturer No:
JAN1N6623/TR
Manufacturer:
Microchip Technology
Package:
Tape & Reel (TR)
Datasheet:
JAN1N6623/TR Datasheet
ECAD Model:
-
Description:
RECTIFIER UFR,FRR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):800 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.55 V @ 1 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):30 ns
Current - Reverse Leakage @ Vr:500 nA @ 800 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:A, Axial
Supplier Device Package:A-PAK
Operating Temperature - Junction:-65°C ~ 150°C
0 Remaining View Similar

In Stock

$10.96
39

Please send RFQ , we will respond immediately.

Similar Products

Part Number JAN1N6623/TR JAN1N6624/TR   JAN1N6626/TR   JAN1N6625/TR   JAN1N6627/TR   JAN1N6628/TR   JAN1N6663/TR   JAN1N5623/TR   JAN1N6620/TR   JAN1N6621/TR   JAN1N6622/TR  
Manufacturer Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology
Product Status Active Active Active Active Active Active Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 800 V 900 V 220 V 1000 V 440 V 660 V 600 V 1000 V 220 V 440 V 660 V
Current - Average Rectified (Io) 1A 1A 1.75A 1A 1.75A 1.75A 500mA 1A 2A 2A 2A
Voltage - Forward (Vf) (Max) @ If 1.55 V @ 1 A 1.55 V @ 1 A 1.35 V @ 1.2 A 1.75 V @ 1 A 1.35 V @ 1.2 A 1.35 V @ 1.2 A 1 V @ 400 mA 1.6 V @ 3 A 1.6 V @ 2 A 1.6 V @ 2 A 1.6 V @ 2 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 30 ns 30 ns 30 ns 30 ns 30 ns 30 ns - 500 ns 30 ns 30 ns 30 ns
Current - Reverse Leakage @ Vr 500 nA @ 800 V 500 nA @ 900 V 2 µA @ 220 V 1 µA @ 1 V 2 µA @ 440 V 2 µA @ 600 V 50 nA @ 600 V 500 nA @ 1 V 500 nA @ 220 V 500 nA @ 440 V 500 nA @ 660 V
Capacitance @ Vr, F - - 40pF @ 10V, 1MHz - 40pF @ 10V, 1MHz - - - 10pF @ 10V, 1MHz 10pF @ 10V, 1MHz 10pF @ 10V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case A, Axial A, Axial E, Axial A, Axial E, Axial E, Axial DO-204AH, DO-35, Axial A, Axial A, Axial A, Axial A, Axial
Supplier Device Package A-PAK - - - - - DO-35 (DO-204AH) - - - -
Operating Temperature - Junction -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C

Related Product By Categories

1N4148WS_R1_00001
1N4148WS_R1_00001
Panjit International Inc.
SOD-323, SWITCHING
1SS119-04TJ-E-Q
1SS119-04TJ-E-Q
Renesas Electronics America Inc
DIODE FOR HIGH SPEED SWITCHING
B240Q-13-F
B240Q-13-F
Diodes Incorporated
DIODE SCHOTTKY 40V 2A SMB
BAS40W,115
BAS40W,115
Nexperia USA Inc.
NEXPERIA BAS40W - RECTIFIER DIOD
IV1D12020T2
IV1D12020T2
Inventchip
SIC DIODE, 1200V 20A, TO-247-2
MPG06J-E3/53
MPG06J-E3/53
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1A MPG06
BYT54K-TAP
BYT54K-TAP
Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 800V 1.25A SOD57
RA354-CT
RA354-CT
Diotec Semiconductor
CUT-TAPE VERSION. STANDARD RECO
HFA08TB120STRL
HFA08TB120STRL
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1.2KV 8A D2PAK
BYV26EGPHE3/73
BYV26EGPHE3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 1A DO204AC
SRA860 C0G
SRA860 C0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 8A TO220AC
RFN1L6STE25
RFN1L6STE25
Rohm Semiconductor
DIODE GEN PURP 600V 800MA PMDS

Related Product By Brand

VXM7-1KE-08-54M0000000
VXM7-1KE-08-54M0000000
Microchip Technology
3225 CRYSTAL, FUND, 50PPM STABIL
DSC6121HI2A-00AH
DSC6121HI2A-00AH
Microchip Technology
MEMS OSC XO 1.71V-3.63V 4SMD
DSC400-0202Q0109KE1T
DSC400-0202Q0109KE1T
Microchip Technology
MEMS OSC XO 2.25V-3.6V 20SMD
DSC2044FE1-H0003T
DSC2044FE1-H0003T
Microchip Technology
MEMS OSC XO 2.25V-3.6V 14SMD
CDLL5271A/TR
CDLL5271A/TR
Microchip Technology
VOLTAGE REGULATOR
1N4984US
1N4984US
Microchip Technology
DIODE ZENER 120V 5W D5B
JAN1N3043C-1/TR
JAN1N3043C-1/TR
Microchip Technology
VOLTAGE REGULATOR
PL903101UMG-T5
PL903101UMG-T5
Microchip Technology
JITTER BLOCKER
PIC32MX110F016CT-V/TL
PIC32MX110F016CT-V/TL
Microchip Technology
IC MCU 32BIT 16KB FLASH 36VTLA
PIC24EP512MC202T-I/SO
PIC24EP512MC202T-I/SO
Microchip Technology
IC MCU 16BIT 512KB FLASH 28SOIC
AT49F002ANT-55TU
AT49F002ANT-55TU
Microchip Technology
IC FLASH 2MBIT PARALLEL 32TSOP
MIC5219-3.3YML-TR
MIC5219-3.3YML-TR
Microchip Technology
IC REG LINEAR 3.3V 500MA 6MLF