JAN1N6622US
  • Share:

Microchip Technology JAN1N6622US

Manufacturer No:
JAN1N6622US
Manufacturer:
Microchip Technology
Package:
Bulk
Datasheet:
JAN1N6622US Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 660V 2A D5A
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):660 V
Current - Average Rectified (Io):1.2A
Voltage - Forward (Vf) (Max) @ If:1.4 V @ 1.2 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):30 ns
Current - Reverse Leakage @ Vr:500 nA @ 660 V
Capacitance @ Vr, F:10pF @ 10V, 1MHz
Mounting Type:Surface Mount
Package / Case:SQ-MELF, A
Supplier Device Package:D-5A
Operating Temperature - Junction:-65°C ~ 150°C
0 Remaining View Similar

In Stock

$13.54
44

Please send RFQ , we will respond immediately.

Similar Products

Part Number JAN1N6622US JAN1N6642US   JAN1N6623US   JAN1N6624US   JAN1N6625US   JAN1N6628US   JAN1N6627US   JAN1N6629US   JAN1N5622US   JAN1N6620US   JAN1N6621US   JAN1N6622U  
Manufacturer Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microsemi Corporation Microchip Technology Microchip Technology Microchip Technology Microsemi Corporation
Product Status Active Active Active Active Active Active Discontinued at Digi-Key Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 660 V 75 V 880 V 990 V 1100 V 660 V 440 V 880 V 1000 V 220 V 75 V 600 V
Current - Average Rectified (Io) 1.2A 300mA 1A 1A 1A 1.75A 1.75A 1.4A 1A 2A 200mA 1.2A
Voltage - Forward (Vf) (Max) @ If 1.4 V @ 1.2 A 1.2 V @ 100 mA 1.55 V @ 1 A 1.55 V @ 1 A 1.75 V @ 1 A 1.35 V @ 2 A 1.35 V @ 1.2 A 1.4 V @ 1.4 A 1.3 V @ 3 A 1.6 V @ 2 A 1.2 V @ 100 mA 1.4 V @ 1.2 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Small Signal =< 200mA (Io), Any Speed Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 30 ns 5 ns 50 ns 50 ns 60 ns 30 ns 30 ns 50 ns 2 µs 30 ns 20 ns 30 ns
Current - Reverse Leakage @ Vr 500 nA @ 660 V 500 nA @ 75 V 500 nA @ 880 V 500 nA @ 990 V 1 µA @ 1100 V 2 µA @ 660 V 2 µA @ 440 V 2 µA @ 880 V 500 nA @ 1000 V 500 nA @ 220 V 500 nA @ 75 V 500 nA @ 600 V
Capacitance @ Vr, F 10pF @ 10V, 1MHz 40pF @ 0V, 1MHz 10pF @ 10V, 1MHz 10pF @ 10V, 1MHz 10pF @ 10V, 1MHz 40pF @ 10V, 1MHz 40pF @ 10V, 1MHz 40pF @ 10V, 1MHz - 10pF @ 10V, 1MHz 2.8pF @ 1.5V, 1MHz -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SQ-MELF, A SQ-MELF, D SQ-MELF, A SQ-MELF, A SQ-MELF, A E-MELF SQ-MELF, E E-MELF SQ-MELF, A SQ-MELF, A SQ-MELF, A SQ-MELF, A
Supplier Device Package D-5A D-5D D-5A D-5A D-5A D-5B D-5B D-5B D-5A D-5A D-5A D-5A
Operating Temperature - Junction -65°C ~ 150°C -65°C ~ 175°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 200°C -65°C ~ 150°C -65°C ~ 200°C -65°C ~ 150°C

Related Product By Categories

C4D08120A
C4D08120A
Wolfspeed, Inc.
DIODE SCHOTTKY 1.2KV 8A TO220-2
CMR2-10 TR13 PBFREE
CMR2-10 TR13 PBFREE
Central Semiconductor Corp
DIODE GEN PURP 1000V 2A SMB
GP3D005A170B
GP3D005A170B
SemiQ
SIC SCHOTTKY DIODE 1700V TO247-2
STTH60RQ06WL
STTH60RQ06WL
STMicroelectronics
600 V, 60 A TURBO 2 SOFT ULTRAFA
1N5407G-T
1N5407G-T
Diodes Incorporated
DIODE GEN PURP 800V 3A DO201AD
VS-MBRD320TR-M3
VS-MBRD320TR-M3
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 3A 20V DPAK
VS-6FR120
VS-6FR120
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1.2KV 6A DO203AA
G3S12020A
G3S12020A
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 20A 2-P
SK14-13
SK14-13
Diodes Incorporated
DIODE SCHOTTKY 40V 1A SMB
MA2ZD140GL
MA2ZD140GL
Panasonic Electronic Components
DIODE SCHOTTKY 20V 100MA SMINI2
SFS1603GHMNG
SFS1603GHMNG
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 16A TO263AB
BAS521LP-7B
BAS521LP-7B
Diodes Incorporated
DIODE GEN PURP 325V 400MA 2DFN

Related Product By Brand

1N5307UR-1/TR
1N5307UR-1/TR
Microchip Technology
CURRENT REGULATOR
1N5747C
1N5747C
Microchip Technology
DIODE ZENER 30V 500MW DO35
JANTXV1N6348/TR
JANTXV1N6348/TR
Microchip Technology
VOLTAGE REGULATOR
JAN1N3045C-1
JAN1N3045C-1
Microchip Technology
DIODE ZENER 110V 1W DO41
PL607082UMG-TR
PL607082UMG-TR
Microchip Technology
IC CLK SYNTHESIZER DUAL 44QFN
PIC24FJ256GB110-I/PF
PIC24FJ256GB110-I/PF
Microchip Technology
IC MCU 16BIT 256KB FLASH 100TQFP
PIC24HJ128GP510-I/PF
PIC24HJ128GP510-I/PF
Microchip Technology
IC MCU 16BIT 128KB FLASH 100TQFP
PIC32MK0512GPE100-E/PT
PIC32MK0512GPE100-E/PT
Microchip Technology
IC MCU 32BIT 512KB FLASH 100TQFP
SY58051UMG-TR
SY58051UMG-TR
Microchip Technology
IC GATE CML UNIV I/O TERM 16-MLF
SY89546UMI
SY89546UMI
Microchip Technology
IC MULTIPLEXER 1 X 4:1 32MLF
11AA080-I/SN
11AA080-I/SN
Microchip Technology
IC EEPROM 8KBIT SGL WIRE 8SOIC
MIC2214-KKBML-TR
MIC2214-KKBML-TR
Microchip Technology
IC REG LINEAR 2.6V/2.6V 10MLF