JAN1N6622US
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Microchip Technology JAN1N6622US

Manufacturer No:
JAN1N6622US
Manufacturer:
Microchip Technology
Package:
Bulk
Datasheet:
JAN1N6622US Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 660V 2A D5A
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Payment:
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Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):660 V
Current - Average Rectified (Io):1.2A
Voltage - Forward (Vf) (Max) @ If:1.4 V @ 1.2 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):30 ns
Current - Reverse Leakage @ Vr:500 nA @ 660 V
Capacitance @ Vr, F:10pF @ 10V, 1MHz
Mounting Type:Surface Mount
Package / Case:SQ-MELF, A
Supplier Device Package:D-5A
Operating Temperature - Junction:-65°C ~ 150°C
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Part Number JAN1N6622US JAN1N6642US   JAN1N6623US   JAN1N6624US   JAN1N6625US   JAN1N6628US   JAN1N6627US   JAN1N6629US   JAN1N5622US   JAN1N6620US   JAN1N6621US   JAN1N6622U  
Manufacturer Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microsemi Corporation Microchip Technology Microchip Technology Microchip Technology Microsemi Corporation
Product Status Active Active Active Active Active Active Discontinued at Digi-Key Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 660 V 75 V 880 V 990 V 1100 V 660 V 440 V 880 V 1000 V 220 V 75 V 600 V
Current - Average Rectified (Io) 1.2A 300mA 1A 1A 1A 1.75A 1.75A 1.4A 1A 2A 200mA 1.2A
Voltage - Forward (Vf) (Max) @ If 1.4 V @ 1.2 A 1.2 V @ 100 mA 1.55 V @ 1 A 1.55 V @ 1 A 1.75 V @ 1 A 1.35 V @ 2 A 1.35 V @ 1.2 A 1.4 V @ 1.4 A 1.3 V @ 3 A 1.6 V @ 2 A 1.2 V @ 100 mA 1.4 V @ 1.2 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Small Signal =< 200mA (Io), Any Speed Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 30 ns 5 ns 50 ns 50 ns 60 ns 30 ns 30 ns 50 ns 2 µs 30 ns 20 ns 30 ns
Current - Reverse Leakage @ Vr 500 nA @ 660 V 500 nA @ 75 V 500 nA @ 880 V 500 nA @ 990 V 1 µA @ 1100 V 2 µA @ 660 V 2 µA @ 440 V 2 µA @ 880 V 500 nA @ 1000 V 500 nA @ 220 V 500 nA @ 75 V 500 nA @ 600 V
Capacitance @ Vr, F 10pF @ 10V, 1MHz 40pF @ 0V, 1MHz 10pF @ 10V, 1MHz 10pF @ 10V, 1MHz 10pF @ 10V, 1MHz 40pF @ 10V, 1MHz 40pF @ 10V, 1MHz 40pF @ 10V, 1MHz - 10pF @ 10V, 1MHz 2.8pF @ 1.5V, 1MHz -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SQ-MELF, A SQ-MELF, D SQ-MELF, A SQ-MELF, A SQ-MELF, A E-MELF SQ-MELF, E E-MELF SQ-MELF, A SQ-MELF, A SQ-MELF, A SQ-MELF, A
Supplier Device Package D-5A D-5D D-5A D-5A D-5A D-5B D-5B D-5B D-5A D-5A D-5A D-5A
Operating Temperature - Junction -65°C ~ 150°C -65°C ~ 175°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 200°C -65°C ~ 150°C -65°C ~ 200°C -65°C ~ 150°C

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