JAN1N6622/TR
  • Share:

Microchip Technology JAN1N6622/TR

Manufacturer No:
JAN1N6622/TR
Manufacturer:
Microchip Technology
Package:
Tape & Reel (TR)
Datasheet:
JAN1N6622/TR Datasheet
ECAD Model:
-
Description:
RECTIFIER UFR,FRR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):660 V
Current - Average Rectified (Io):2A
Voltage - Forward (Vf) (Max) @ If:1.6 V @ 2 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):30 ns
Current - Reverse Leakage @ Vr:500 nA @ 660 V
Capacitance @ Vr, F:10pF @ 10V, 1MHz
Mounting Type:Through Hole
Package / Case:A, Axial
Supplier Device Package:- 
Operating Temperature - Junction:-65°C ~ 150°C
0 Remaining View Similar

In Stock

$10.71
62

Please send RFQ , we will respond immediately.

Similar Products

Part Number JAN1N6622/TR JAN1N6642/TR   JAN1N6623/TR   JAN1N6624/TR   JAN1N6626/TR   JAN1N6625/TR   JAN1N6627/TR   JAN1N6628/TR   JAN1N6662/TR   JAN1N5622/TR   JAN1N6620/TR   JAN1N6621/TR  
Manufacturer Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology
Product Status Active Active Active Active Active Active Active Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 660 V 75 V 800 V 900 V 220 V 1000 V 440 V 660 V 400 V 1000 V 220 V 440 V
Current - Average Rectified (Io) 2A 300mA 1A 1A 1.75A 1A 1.75A 1.75A 500mA 1A 2A 2A
Voltage - Forward (Vf) (Max) @ If 1.6 V @ 2 A 1.2 V @ 100 mA 1.55 V @ 1 A 1.55 V @ 1 A 1.35 V @ 1.2 A 1.75 V @ 1 A 1.35 V @ 1.2 A 1.35 V @ 1.2 A 1 V @ 400 mA 1.3 V @ 3 A 1.6 V @ 2 A 1.6 V @ 2 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 30 ns 5 ns 30 ns 30 ns 30 ns 30 ns 30 ns 30 ns - 2 µs 30 ns 30 ns
Current - Reverse Leakage @ Vr 500 nA @ 660 V 500 nA @ 75 V 500 nA @ 800 V 500 nA @ 900 V 2 µA @ 220 V 1 µA @ 1 V 2 µA @ 440 V 2 µA @ 600 V 50 nA @ 400 V 500 nA @ 1 V 500 nA @ 220 V 500 nA @ 440 V
Capacitance @ Vr, F 10pF @ 10V, 1MHz 5pF @ 0V, 1MHz - - 40pF @ 10V, 1MHz - 40pF @ 10V, 1MHz - - - 10pF @ 10V, 1MHz 10pF @ 10V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case A, Axial D, Axial A, Axial A, Axial E, Axial A, Axial E, Axial E, Axial DO-204AH, DO-35, Axial A, Axial A, Axial A, Axial
Supplier Device Package - - A-PAK - - - - - DO-35 (DO-204AH) - - -
Operating Temperature - Junction -65°C ~ 150°C -65°C ~ 175°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 200°C -65°C ~ 150°C -65°C ~ 150°C

Related Product By Categories

ES3D-E3/9AT
ES3D-E3/9AT
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 3A DO214AB
PMEG2005AESFC315
PMEG2005AESFC315
NXP USA Inc.
RECTIFIER DIODE, SCHOTTKY
CMOSH2-4L TR PBFREE
CMOSH2-4L TR PBFREE
Central Semiconductor Corp
DIODE SCHOTTKY 40V 200MA SOD523
SM5819PL-TP
SM5819PL-TP
Micro Commercial Co
DIODE SCHOTTKY 40V 1A SOD123FL
UG4A-E3/73
UG4A-E3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 4A DO201AD
VS-8TQ080-M3
VS-8TQ080-M3
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 80V 8A TO220AC
1N2022
1N2022
Solid State Inc.
DO5 40 AMP SILICON RECTFIER
SBL840
SBL840
Diodes Incorporated
DIODE SCHOTTKY 40V 8A TO220AC
GP30K-E3/73
GP30K-E3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 800V 3A DO201AD
RGP10KHE3/73
RGP10KHE3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 800V 1A DO204AL
S1AL MQG
S1AL MQG
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A SUB SMA
RBR2MM40CTFTR
RBR2MM40CTFTR
Rohm Semiconductor
DIODE (RECTIFIER FRD) 40V-VR 2A-

Related Product By Brand

DSC1003DI2-024.5760
DSC1003DI2-024.5760
Microchip Technology
MEMS OSC XO 24.5760MHZ CMOS SMD
MSCDC200A170D1PAG
MSCDC200A170D1PAG
Microchip Technology
PM-DIODE-SIC-SBD-D1P
PL565-68OC
PL565-68OC
Microchip Technology
IC VCXO 400MHZ 16TSSOP
MCP48FVB12-E/UN
MCP48FVB12-E/UN
Microchip Technology
IC DAC 10BIT V-OUT 10MSOP
PIC18F27Q83-I/5N
PIC18F27Q83-I/5N
Microchip Technology
IC MCU 8BIT 128KB FLASH 28VQFN
AT42QT1244-AUR
AT42QT1244-AUR
Microchip Technology
IC TOUCH SENSOR 24KEY 32TQFP
25LC040AT-I/MC
25LC040AT-I/MC
Microchip Technology
IC EEPROM 4KBIT SPI 10MHZ 8DFN
AT27BV1024-90VC
AT27BV1024-90VC
Microchip Technology
IC EPROM 1MBIT PARALLEL 40VSOP
TC54VC2302EZB
TC54VC2302EZB
Microchip Technology
IC SUPERVISOR 1 CHANNEL TO92-3
TC54VN1802EZB
TC54VN1802EZB
Microchip Technology
IC SUPERVISOR 1 CHANNEL TO92-3
TC1055-3.0VCT713
TC1055-3.0VCT713
Microchip Technology
IC REG LINEAR 3V 100MA SOT23-5
MIC9131YM-TR
MIC9131YM-TR
Microchip Technology
IC REG CTRLR TELECOM 1OUT 16SOIC