JAN1N6622/TR
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Microchip Technology JAN1N6622/TR

Manufacturer No:
JAN1N6622/TR
Manufacturer:
Microchip Technology
Package:
Tape & Reel (TR)
Datasheet:
JAN1N6622/TR Datasheet
ECAD Model:
-
Description:
RECTIFIER UFR,FRR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):660 V
Current - Average Rectified (Io):2A
Voltage - Forward (Vf) (Max) @ If:1.6 V @ 2 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):30 ns
Current - Reverse Leakage @ Vr:500 nA @ 660 V
Capacitance @ Vr, F:10pF @ 10V, 1MHz
Mounting Type:Through Hole
Package / Case:A, Axial
Supplier Device Package:- 
Operating Temperature - Junction:-65°C ~ 150°C
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$10.71
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Similar Products

Part Number JAN1N6622/TR JAN1N6642/TR   JAN1N6623/TR   JAN1N6624/TR   JAN1N6626/TR   JAN1N6625/TR   JAN1N6627/TR   JAN1N6628/TR   JAN1N6662/TR   JAN1N5622/TR   JAN1N6620/TR   JAN1N6621/TR  
Manufacturer Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology
Product Status Active Active Active Active Active Active Active Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 660 V 75 V 800 V 900 V 220 V 1000 V 440 V 660 V 400 V 1000 V 220 V 440 V
Current - Average Rectified (Io) 2A 300mA 1A 1A 1.75A 1A 1.75A 1.75A 500mA 1A 2A 2A
Voltage - Forward (Vf) (Max) @ If 1.6 V @ 2 A 1.2 V @ 100 mA 1.55 V @ 1 A 1.55 V @ 1 A 1.35 V @ 1.2 A 1.75 V @ 1 A 1.35 V @ 1.2 A 1.35 V @ 1.2 A 1 V @ 400 mA 1.3 V @ 3 A 1.6 V @ 2 A 1.6 V @ 2 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 30 ns 5 ns 30 ns 30 ns 30 ns 30 ns 30 ns 30 ns - 2 µs 30 ns 30 ns
Current - Reverse Leakage @ Vr 500 nA @ 660 V 500 nA @ 75 V 500 nA @ 800 V 500 nA @ 900 V 2 µA @ 220 V 1 µA @ 1 V 2 µA @ 440 V 2 µA @ 600 V 50 nA @ 400 V 500 nA @ 1 V 500 nA @ 220 V 500 nA @ 440 V
Capacitance @ Vr, F 10pF @ 10V, 1MHz 5pF @ 0V, 1MHz - - 40pF @ 10V, 1MHz - 40pF @ 10V, 1MHz - - - 10pF @ 10V, 1MHz 10pF @ 10V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case A, Axial D, Axial A, Axial A, Axial E, Axial A, Axial E, Axial E, Axial DO-204AH, DO-35, Axial A, Axial A, Axial A, Axial
Supplier Device Package - - A-PAK - - - - - DO-35 (DO-204AH) - - -
Operating Temperature - Junction -65°C ~ 150°C -65°C ~ 175°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 200°C -65°C ~ 150°C -65°C ~ 150°C

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