JAN1N6621US
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Microchip Technology JAN1N6621US

Manufacturer No:
JAN1N6621US
Manufacturer:
Microchip Technology
Package:
Bulk
Datasheet:
JAN1N6621US Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 440V 2A D5A
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):75 V
Current - Average Rectified (Io):200mA
Voltage - Forward (Vf) (Max) @ If:1.2 V @ 100 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):20 ns
Current - Reverse Leakage @ Vr:500 nA @ 75 V
Capacitance @ Vr, F:2.8pF @ 1.5V, 1MHz
Mounting Type:Surface Mount
Package / Case:SQ-MELF, A
Supplier Device Package:D-5A
Operating Temperature - Junction:-65°C ~ 200°C
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Manufacturer Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microsemi Corporation Microchip Technology Microchip Technology Microsemi Corporation
Product Status Active Active Active Active Active Active Active Discontinued at Digi-Key Active Active Discontinued at Digi-Key Active Active
Diode Type Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 75 V 880 V 660 V 990 V 1100 V 660 V 1100 V 440 V 225 V 880 V 800 V 220 V 400 V
Current - Average Rectified (Io) 200mA 1A 1.2A 1A 1A 1.75A 1.4A 1.75A 500mA 1.4A 1A 2A 1.2A
Voltage - Forward (Vf) (Max) @ If 1.2 V @ 100 mA 1.55 V @ 1 A 1.4 V @ 1.2 A 1.55 V @ 1 A 1.75 V @ 1 A 1.35 V @ 2 A 1.6 V @ 1.4 A 1.35 V @ 1.2 A 1 V @ 400 mA 1.4 V @ 1.4 A 1.6 V @ 3 A 1.6 V @ 2 A 1.4 V @ 1.2 A
Speed Small Signal =< 200mA (Io), Any Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 20 ns 50 ns 30 ns 50 ns 60 ns 30 ns 60 ns 30 ns - 50 ns 300 ns 30 ns 30 ns
Current - Reverse Leakage @ Vr 500 nA @ 75 V 500 nA @ 880 V 500 nA @ 660 V 500 nA @ 990 V 1 µA @ 1100 V 2 µA @ 660 V 4 µA @ 1100 V 2 µA @ 440 V 50 nA @ 225 V 2 µA @ 880 V 500 nA @ 800 V 500 nA @ 220 V 500 nA @ 400 V
Capacitance @ Vr, F 2.8pF @ 1.5V, 1MHz 10pF @ 10V, 1MHz 10pF @ 10V, 1MHz 10pF @ 10V, 1MHz 10pF @ 10V, 1MHz 40pF @ 10V, 1MHz 40pF @ 10V, 1MHz 40pF @ 10V, 1MHz - 40pF @ 10V, 1MHz - 10pF @ 10V, 1MHz -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SQ-MELF, A SQ-MELF, A SQ-MELF, A SQ-MELF, A SQ-MELF, A E-MELF E-MELF SQ-MELF, E SQ-MELF, A E-MELF SQ-MELF, A SQ-MELF, A SQ-MELF, A
Supplier Device Package D-5A D-5A D-5A D-5A D-5A D-5B D-5B D-5B D-5A D-5B D-5A D-5A D-5A
Operating Temperature - Junction -65°C ~ 200°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 175°C -65°C ~ 150°C -65°C ~ 175°C -65°C ~ 150°C -65°C ~ 150°C

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