JAN1N6621/TR
  • Share:

Microchip Technology JAN1N6621/TR

Manufacturer No:
JAN1N6621/TR
Manufacturer:
Microchip Technology
Package:
Tape & Reel (TR)
Datasheet:
JAN1N6621/TR Datasheet
ECAD Model:
-
Description:
RECTIFIER UFR,FRR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):440 V
Current - Average Rectified (Io):2A
Voltage - Forward (Vf) (Max) @ If:1.6 V @ 2 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):30 ns
Current - Reverse Leakage @ Vr:500 nA @ 440 V
Capacitance @ Vr, F:10pF @ 10V, 1MHz
Mounting Type:Through Hole
Package / Case:A, Axial
Supplier Device Package:- 
Operating Temperature - Junction:-65°C ~ 150°C
0 Remaining View Similar

In Stock

$10.80
89

Please send RFQ , we will respond immediately.

Similar Products

Part Number JAN1N6621/TR JAN1N6623/TR   JAN1N6622/TR   JAN1N6624/TR   JAN1N6626/TR   JAN1N6625/TR   JAN1N6627/TR   JAN1N6631/TR   JAN1N6628/TR   JAN1N6661/TR   JAN1N5621/TR   JAN1N6620/TR  
Manufacturer Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology
Product Status Active Active Active Active Active Active Active Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 440 V 800 V 660 V 900 V 220 V 1000 V 440 V 1.1 V 660 V 225 V 800 V 220 V
Current - Average Rectified (Io) 2A 1A 2A 1A 1.75A 1A 1.75A 1.4A 1.75A 500mA 1A 2A
Voltage - Forward (Vf) (Max) @ If 1.6 V @ 2 A 1.55 V @ 1 A 1.6 V @ 2 A 1.55 V @ 1 A 1.35 V @ 1.2 A 1.75 V @ 1 A 1.35 V @ 1.2 A 1.6 V @ 1 A 1.35 V @ 1.2 A 1 V @ 400 mA 1.6 V @ 3 A 1.6 V @ 2 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 30 ns 30 ns 30 ns 30 ns 30 ns 30 ns 30 ns 60 ns 30 ns - 300 ns 30 ns
Current - Reverse Leakage @ Vr 500 nA @ 440 V 500 nA @ 800 V 500 nA @ 660 V 500 nA @ 900 V 2 µA @ 220 V 1 µA @ 1 V 2 µA @ 440 V 2 µA @ 1 V 2 µA @ 600 V 50 nA @ 225 V 500 nA @ 800 V 500 nA @ 220 V
Capacitance @ Vr, F 10pF @ 10V, 1MHz - 10pF @ 10V, 1MHz - 40pF @ 10V, 1MHz - 40pF @ 10V, 1MHz - - - - 10pF @ 10V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case A, Axial A, Axial A, Axial A, Axial E, Axial A, Axial E, Axial E, Axial E, Axial DO-204AH, DO-35, Axial A, Axial A, Axial
Supplier Device Package - A-PAK - - - - - - - DO-35 (DO-204AH) - -
Operating Temperature - Junction -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 150°C

Related Product By Categories

PSDP30120S1_T0_00001
PSDP30120S1_T0_00001
Panjit International Inc.
TO-220AC, FAST
1N4148WS-HE3-08
1N4148WS-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 150MA SOD323
MSQ1PJ-M3/H
MSQ1PJ-M3/H
Vishay General Semiconductor - Diodes Division
1A, 600V, MICROSMP, ESD PROTECTI
SB12AFC_R1_00001
SB12AFC_R1_00001
Panjit International Inc.
SMAF-C, SKY
GF1J
GF1J
onsemi
DIODE GEN PURP 600V 1A SMA
RURG3060-F085
RURG3060-F085
onsemi
DIODE GEN PURP 600V 30A TO247-2
STPSC12065G-TR
STPSC12065G-TR
STMicroelectronics
SILICON CARBIDE DIODES
VS-20ETF12S-M3
VS-20ETF12S-M3
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1.2KV 20A TO263AB
IDH04SG60CXKSA2
IDH04SG60CXKSA2
Infineon Technologies
DIODE SCHOTTKY 600V 4A TO220-2
RGP25MHE3/54
RGP25MHE3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 2.5A DO201
NUR460P/L02U
NUR460P/L02U
WeEn Semiconductors
DIODE GEN PURP 600V 4A DO201AD
SRAF520
SRAF520
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 20V 5A ITO220AC

Related Product By Brand

USBQNM50424CE3/TR7
USBQNM50424CE3/TR7
Microchip Technology
TVS DIODE 24VWM 57VC QFN143
SMDA03C/TR7
SMDA03C/TR7
Microchip Technology
TVS DIODE 3.3VWM 9VC 8-SO
DSC1101DM5-080.0000
DSC1101DM5-080.0000
Microchip Technology
MEMS OSC XO 80.0000MHZ CMOS SMD
DSC6003JL3B-004.0960
DSC6003JL3B-004.0960
Microchip Technology
MEMS OSCILLATOR SMD
DSC6101CE2A-PROGRAMMABLE
DSC6101CE2A-PROGRAMMABLE
Microchip Technology
MEMS OSC PROG XO CMOS 1.71V
SMBJ5343B/TR13
SMBJ5343B/TR13
Microchip Technology
DIODE ZENER 7.5V 5W SMBJ
JAN1N3824C-1/TR
JAN1N3824C-1/TR
Microchip Technology
VOLTAGE REGULATOR
PIC32MX534F064HT-I/MR
PIC32MX534F064HT-I/MR
Microchip Technology
IC MCU 32BIT 64KB FLASH 64VQFN
PIC17C766T-33E/PT
PIC17C766T-33E/PT
Microchip Technology
IC MCU 8BIT 32KB OTP 80TQFP
24AA014-I/MC
24AA014-I/MC
Microchip Technology
IC EEPROM 1KBIT I2C 400KHZ 8DFN
MIC69153YME-TR
MIC69153YME-TR
Microchip Technology
IC REG LINEAR POS ADJ 1.5A 8SOIC
MIC94355-GYMT-TR
MIC94355-GYMT-TR
Microchip Technology
IC REG LINEAR 1.8V 500MA 6TDFN