JAN1N6621/TR
  • Share:

Microchip Technology JAN1N6621/TR

Manufacturer No:
JAN1N6621/TR
Manufacturer:
Microchip Technology
Package:
Tape & Reel (TR)
Datasheet:
JAN1N6621/TR Datasheet
ECAD Model:
-
Description:
RECTIFIER UFR,FRR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):440 V
Current - Average Rectified (Io):2A
Voltage - Forward (Vf) (Max) @ If:1.6 V @ 2 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):30 ns
Current - Reverse Leakage @ Vr:500 nA @ 440 V
Capacitance @ Vr, F:10pF @ 10V, 1MHz
Mounting Type:Through Hole
Package / Case:A, Axial
Supplier Device Package:- 
Operating Temperature - Junction:-65°C ~ 150°C
0 Remaining View Similar

In Stock

$10.80
89

Please send RFQ , we will respond immediately.

Similar Products

Part Number JAN1N6621/TR JAN1N6623/TR   JAN1N6622/TR   JAN1N6624/TR   JAN1N6626/TR   JAN1N6625/TR   JAN1N6627/TR   JAN1N6631/TR   JAN1N6628/TR   JAN1N6661/TR   JAN1N5621/TR   JAN1N6620/TR  
Manufacturer Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology
Product Status Active Active Active Active Active Active Active Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 440 V 800 V 660 V 900 V 220 V 1000 V 440 V 1.1 V 660 V 225 V 800 V 220 V
Current - Average Rectified (Io) 2A 1A 2A 1A 1.75A 1A 1.75A 1.4A 1.75A 500mA 1A 2A
Voltage - Forward (Vf) (Max) @ If 1.6 V @ 2 A 1.55 V @ 1 A 1.6 V @ 2 A 1.55 V @ 1 A 1.35 V @ 1.2 A 1.75 V @ 1 A 1.35 V @ 1.2 A 1.6 V @ 1 A 1.35 V @ 1.2 A 1 V @ 400 mA 1.6 V @ 3 A 1.6 V @ 2 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 30 ns 30 ns 30 ns 30 ns 30 ns 30 ns 30 ns 60 ns 30 ns - 300 ns 30 ns
Current - Reverse Leakage @ Vr 500 nA @ 440 V 500 nA @ 800 V 500 nA @ 660 V 500 nA @ 900 V 2 µA @ 220 V 1 µA @ 1 V 2 µA @ 440 V 2 µA @ 1 V 2 µA @ 600 V 50 nA @ 225 V 500 nA @ 800 V 500 nA @ 220 V
Capacitance @ Vr, F 10pF @ 10V, 1MHz - 10pF @ 10V, 1MHz - 40pF @ 10V, 1MHz - 40pF @ 10V, 1MHz - - - - 10pF @ 10V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case A, Axial A, Axial A, Axial A, Axial E, Axial A, Axial E, Axial E, Axial E, Axial DO-204AH, DO-35, Axial A, Axial A, Axial
Supplier Device Package - A-PAK - - - - - - - DO-35 (DO-204AH) - -
Operating Temperature - Junction -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 150°C

Related Product By Categories

VS-20ETF06SLHM3
VS-20ETF06SLHM3
Vishay General Semiconductor - Diodes Division
DIODES - D2PAK-E3
PAD50DFN 8L
PAD50DFN 8L
Linear Integrated Systems, Inc.
DIODE GEN PURP 30V 10MA 8DFN
FES16HT-E3/45
FES16HT-E3/45
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 500V 16A TO220AC
TST10L60CW
TST10L60CW
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 5A TO220AB
SS8P3L-M3/86A
SS8P3L-M3/86A
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 8A TO277A
UG4A-E3/73
UG4A-E3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 4A DO201AD
F1857D1600
F1857D1600
Sensata-Crydom
DIODE GEN PURP 1.6KV 55A MODULE
G4S06508AT
G4S06508AT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 8A 2-PIN
8EWF02S
8EWF02S
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 8A DPAK
PDS1045-7
PDS1045-7
Diodes Incorporated
DIODE SCHOTTKY 45V 10A POWERDI5
MBR7100 C0G
MBR7100 C0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 100V 7.5A TO220AC
RB551VM-40TE-17
RB551VM-40TE-17
Rohm Semiconductor
DIODE SCHOTTKY 30V 500MA UMD2

Related Product By Brand

MXSMBJ10CAE3
MXSMBJ10CAE3
Microchip Technology
TVS DIODE 10VWM 17VC SMBJ
DSC6001JI2B-116K000
DSC6001JI2B-116K000
Microchip Technology
MEMS OSC ULP LVCMOS -40C-85C 25P
1N4753AUR
1N4753AUR
Microchip Technology
DIODE ZENER 36V 1W DO213AB
PIC32MX274F256B-V/MM
PIC32MX274F256B-V/MM
Microchip Technology
IC MCU 32BIT 256KB FLASH 28QFN
ATSAMD20J18A-AUT
ATSAMD20J18A-AUT
Microchip Technology
IC MCU 32BIT 256KB FLASH 64LQFP
PIC24FJ16MC101-I/SO
PIC24FJ16MC101-I/SO
Microchip Technology
IC MCU 16BIT 16KB FLASH 20SOIC
DSPIC33FJ64GP202T-I/SO
DSPIC33FJ64GP202T-I/SO
Microchip Technology
IC MCU 16BIT 64KB FLASH 28SOIC
PIC17C42A-16I/PQ
PIC17C42A-16I/PQ
Microchip Technology
IC MCU 8BIT 4KB OTP 44MQFP
TS80C51RD2-LIE
TS80C51RD2-LIE
Microchip Technology
IC MCU 8BIT ROMLESS 44VQFP
93LC56B-I/SN
93LC56B-I/SN
Microchip Technology
IC EEPROM 2KBIT SPI 2MHZ 8SOIC
25C320T/SN
25C320T/SN
Microchip Technology
IC EEPROM 32KBIT SPI 3MHZ 8SOIC
AT29C010A-90TC
AT29C010A-90TC
Microchip Technology
IC FLASH 1MBIT PARALLEL 32TSOP