JAN1N649-1/TR
  • Share:

Microchip Technology JAN1N649-1/TR

Manufacturer No:
JAN1N649-1/TR
Manufacturer:
Microchip Technology
Package:
Tape & Reel (TR)
Datasheet:
JAN1N649-1/TR Datasheet
ECAD Model:
-
Description:
SIGNAL/COMPUTER DIODE
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):400mA
Voltage - Forward (Vf) (Max) @ If:1 V @ 400 mA
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:50 nA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:DO-204AH, DO-35, Axial
Supplier Device Package:DO-35
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

-
518

Please send RFQ , we will respond immediately.

Similar Products

Part Number JAN1N649-1/TR JAN1N645-1/TR   JAN1N647-1/TR  
Manufacturer Microchip Technology Microchip Technology Microchip Technology
Product Status Active Active Active
Diode Type Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 225 V 400 V
Current - Average Rectified (Io) 400mA 400mA 400mA
Voltage - Forward (Vf) (Max) @ If 1 V @ 400 mA 1 V @ 400 mA 1 V @ 400 mA
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - -
Current - Reverse Leakage @ Vr 50 nA @ 600 V 50 nA @ 225 V 50 nA @ 400 V
Capacitance @ Vr, F - - -
Mounting Type Through Hole Through Hole Through Hole
Package / Case DO-204AH, DO-35, Axial DO-204AH, DO-35, Axial DO-204AH, DO-35, Axial
Supplier Device Package DO-35 DO-35 DO-35
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

ES2GHE3_A/H
ES2GHE3_A/H
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 300V 2A DO214AA
ES1PDHM3/85A
ES1PDHM3/85A
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 1A DO220AA
CRS11(TE85L,Q,M)
CRS11(TE85L,Q,M)
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 30V 1A SFLAT
BYM13-20-E3/96
BYM13-20-E3/96
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 20V 1A DO213AB
BAV21HWF-7
BAV21HWF-7
Diodes Incorporated
DIODE GP 200V 200MA SOD123F
SS1H9-E3/5AT
SS1H9-E3/5AT
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 90V 1A DO214AC
SD101CW-HE3-18
SD101CW-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 400MW 40V SOD123
ES3GBH
ES3GBH
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 3A DO214AA
VS-16EDH02-M3/I
VS-16EDH02-M3/I
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 16A TO263AC
BYC8B-600,118
BYC8B-600,118
WeEn Semiconductors
DIODE GEN PURP 500V 8A D2PAK
1N6675
1N6675
Microchip Technology
DIODE SCHOTTKY 20V 200MA DO35
B380CE-13
B380CE-13
Diodes Incorporated
DIODE SCHOTTKY 80V 3A SMC

Related Product By Brand

MSMBJ33CAE3
MSMBJ33CAE3
Microchip Technology
TVS DIODE 33VWM 53.3VC SMBJ
MXLSMCJ54CAE3
MXLSMCJ54CAE3
Microchip Technology
TVS DIODE 54VWM 87.1VC DO214AB
VCC6-RCF-160M000000
VCC6-RCF-160M000000
Microchip Technology
OSCILLATOR CMOS SMD
DSC6111JI2B-025.0000T
DSC6111JI2B-025.0000T
Microchip Technology
OSC MEMS AUTO -40C-85C SMD
DSC8123AI2T
DSC8123AI2T
Microchip Technology
MEMS OSC PROG BLANK 10MHZ-460MHZ
DM160216
DM160216
Microchip Technology
BOARD DEV DALI DMX512A UNIV
JANTX1N4959US
JANTX1N4959US
Microchip Technology
DIODE ZENER 11V 5W D5B
ARF463AG
ARF463AG
Microchip Technology
RF PWR MOSFET 500V 9A TO-247
PIC16F687-I/P
PIC16F687-I/P
Microchip Technology
IC MCU 8BIT 3.5KB FLASH 20DIP
PIC18LF46K80-I/ML
PIC18LF46K80-I/ML
Microchip Technology
IC MCU 8BIT 64KB FLASH 44QFN
AT87F51RC-24PC
AT87F51RC-24PC
Microchip Technology
IC MCU 8BIT 32KB FLASH 40DIP
MCP6V06T-E/SN
MCP6V06T-E/SN
Microchip Technology
IC OPAMP ZERO-DRIFT 1 CIRC 8SOIC