JAN1N645-1
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Microchip Technology JAN1N645-1

Manufacturer No:
JAN1N645-1
Manufacturer:
Microchip Technology
Package:
Bulk
Datasheet:
JAN1N645-1 Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 225V 400MA DO35
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):225 V
Current - Average Rectified (Io):400mA
Voltage - Forward (Vf) (Max) @ If:1 V @ 400 mA
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:50 nA @ 225 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:DO-204AH, DO-35, Axial
Supplier Device Package:DO-35
Operating Temperature - Junction:-65°C ~ 175°C
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Similar Products

Part Number JAN1N645-1 JAN1N647-1   JAN1N649-1  
Manufacturer Microchip Technology Microchip Technology Microchip Technology
Product Status Active Active Active
Diode Type Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 225 V 400 V 600 V
Current - Average Rectified (Io) 400mA 400mA 400mA
Voltage - Forward (Vf) (Max) @ If 1 V @ 400 mA 1 V @ 400 mA 1 V @ 400 mA
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - -
Current - Reverse Leakage @ Vr 50 nA @ 225 V 50 nA @ 400 V 50 nA @ 600 V
Capacitance @ Vr, F - - -
Mounting Type Through Hole Through Hole Through Hole
Package / Case DO-204AH, DO-35, Axial DO-204AH, DO-35, Axial DO-204AH, DO-35, Axial
Supplier Device Package DO-35 DO-35 DO-35
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

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