JAN1N5822US/TR
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Microchip Technology JAN1N5822US/TR

Manufacturer No:
JAN1N5822US/TR
Manufacturer:
Microchip Technology
Package:
Tape & Reel (TR)
Datasheet:
JAN1N5822US/TR Datasheet
ECAD Model:
-
Description:
DIODE SMALL-SIGNAL SCHOTTKY
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):40 V
Current - Average Rectified (Io):3A
Voltage - Forward (Vf) (Max) @ If:500 mV @ 3 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:- 
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:SQ-MELF, B
Supplier Device Package:B, SQ-MELF
Operating Temperature - Junction:-65°C ~ 150°C
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In Stock

$65.78
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Similar Products

Part Number JAN1N5822US/TR JAN1N5622US/TR   JAN1N5802US/TR   JAN1N5822US.TR  
Manufacturer Microchip Technology Microchip Technology Microchip Technology Semtech Corporation
Product Status Active Active Active Discontinued at Digi-Key
Diode Type Schottky Standard Standard Schottky
Voltage - DC Reverse (Vr) (Max) 40 V 1000 V 50 V 40 V
Current - Average Rectified (Io) 3A 1A 2.5A 3A
Voltage - Forward (Vf) (Max) @ If 500 mV @ 3 A 1.3 V @ 3 A 975 mV @ 2.5 A 500 mV @ 3 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - 2 µs 25 ns -
Current - Reverse Leakage @ Vr - 500 nA @ 1 V 1 µA @ 50 V 100 µA @ 40 V
Capacitance @ Vr, F - - 25pF @ 10V, 1MHz -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SQ-MELF, B SQ-MELF, A SQ-MELF, A SQ-MELF
Supplier Device Package B, SQ-MELF D-5A D-5A -
Operating Temperature - Junction -65°C ~ 150°C -65°C ~ 200°C -65°C ~ 175°C -65°C ~ 125°C

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