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| Part Number | JAN1N5822/TR | JAN1N5622/TR | JAN1N5802/TR |
|---|---|---|---|
| Manufacturer | Microchip Technology | Microchip Technology | Microchip Technology |
| Product Status | Active | Active | Active |
| Diode Type | Schottky | Standard | Standard |
| Voltage - DC Reverse (Vr) (Max) | 40 V | 1000 V | 50 V |
| Current - Average Rectified (Io) | 3A | 1A | 2.5A |
| Voltage - Forward (Vf) (Max) @ If | 500 mV @ 3 A | 1.3 V @ 3 A | 975 mV @ 2.5 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | - | 2 µs | 25 ns |
| Current - Reverse Leakage @ Vr | 100 µA @ 40 V | 500 nA @ 1 V | 1 µA @ 50 V |
| Capacitance @ Vr, F | - | - | 25pF @ 10V, 1MHz |
| Mounting Type | Through Hole | Through Hole | Through Hole |
| Package / Case | B, Axial | A, Axial | A, Axial |
| Supplier Device Package | - | - | - |
| Operating Temperature - Junction | -65°C ~ 125°C | -65°C ~ 200°C | -65°C ~ 175°C |
