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| Part Number | JAN1N5806US | JAN1N5802US | JAN1N5806URS |
|---|---|---|---|
| Manufacturer | Microchip Technology | Microchip Technology | Microchip Technology |
| Product Status | Active | Active | Active |
| Diode Type | Standard | Standard | Standard |
| Voltage - DC Reverse (Vr) (Max) | 150 V | 50 V | 150 V |
| Current - Average Rectified (Io) | 2.5A | 2.5A | 1A |
| Voltage - Forward (Vf) (Max) @ If | 975 mV @ 2.5 A | 975 mV @ 2.5 A | 875 mV @ 1 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 25 ns | 25 ns | 25 ns |
| Current - Reverse Leakage @ Vr | 1 µA @ 150 V | 1 µA @ 50 V | 1 µA @ 150 V |
| Capacitance @ Vr, F | 25pF @ 10V, 1MHz | 25pF @ 10V, 1MHz | 25pF @ 10V, 1MHz |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount |
| Package / Case | SQ-MELF, A | SQ-MELF, A | SQ-MELF, A |
| Supplier Device Package | D-5A | D-5A | A-MELF |
| Operating Temperature - Junction | -65°C ~ 175°C | -65°C ~ 175°C | -65°C ~ 175°C |
