JAN1N5802US/TR
  • Share:

Microchip Technology JAN1N5802US/TR

Manufacturer No:
JAN1N5802US/TR
Manufacturer:
Microchip Technology
Package:
Tape & Reel (TR)
Datasheet:
JAN1N5802US/TR Datasheet
ECAD Model:
-
Description:
RECTIFIER UFR,FRR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):50 V
Current - Average Rectified (Io):2.5A
Voltage - Forward (Vf) (Max) @ If:975 mV @ 2.5 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):25 ns
Current - Reverse Leakage @ Vr:1 µA @ 50 V
Capacitance @ Vr, F:25pF @ 10V, 1MHz
Mounting Type:Surface Mount
Package / Case:SQ-MELF, A
Supplier Device Package:D-5A
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

$10.48
52

Please send RFQ , we will respond immediately.

Similar Products

Part Number JAN1N5802US/TR JAN1N5806US/TR   JAN1N5804US/TR   JAN1N5822US/TR  
Manufacturer Microchip Technology Microchip Technology Microchip Technology Microchip Technology
Product Status Active Active Active Active
Diode Type Standard Standard Standard Schottky
Voltage - DC Reverse (Vr) (Max) 50 V 150 V 100 V 40 V
Current - Average Rectified (Io) 2.5A 2.5A 2.5A 3A
Voltage - Forward (Vf) (Max) @ If 975 mV @ 2.5 A 975 mV @ 2.5 A 975 mV @ 2.5 A 500 mV @ 3 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 25 ns 25 ns 25 ns -
Current - Reverse Leakage @ Vr 1 µA @ 50 V 1 µA @ 150 V 1 µA @ 100 V -
Capacitance @ Vr, F 25pF @ 10V, 1MHz 25pF @ 10V, 1MHz 25pF @ 10V, 1MHz -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SQ-MELF, A SQ-MELF, A SQ-MELF, A SQ-MELF, B
Supplier Device Package D-5A D-5A D-5A B, SQ-MELF
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 150°C

Related Product By Categories

RS1MFP
RS1MFP
onsemi
DIODE GP 1000V 1.2A SOD123HE
1SS119-E
1SS119-E
Renesas Electronics America Inc
DIODE FOR HIGH SPEED SWITCHING
RD0506LS-SB5
RD0506LS-SB5
Sanyo
ULTRAHIGH-SPEED DIFFUSED JUNCTIO
SARS01V1
SARS01V1
Sanken
DIODE GEN PURP 800V 1.2A AXIAL
MBRS4201T3G
MBRS4201T3G
onsemi
DIODE SCHOTTKY 200V 4A SMC
NRVTS1545EMFST1G
NRVTS1545EMFST1G
onsemi
DIODE SCHOTTKY 45V 15A 5DFN
NRVB130LSFT1G
NRVB130LSFT1G
onsemi
DIODE SCHOTTKY 30V 1A SOD123FL
ES1JL RUG
ES1JL RUG
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A SUB SMA
1N5406GP-E3/54
1N5406GP-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 3A DO201AD
DSA15IM45IB
DSA15IM45IB
IXYS
DIODE SCHOTTKY 45V 15A TO262
S2BA-13
S2BA-13
Diodes Incorporated
DIODE GEN PURP 100V 1.5A SMA
MURF8L60 C0G
MURF8L60 C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 8A ITO220AC

Related Product By Brand

MASMBJ33AE3
MASMBJ33AE3
Microchip Technology
TVS DIODE 33VWM 53.3VC SMBJ
MXSMBJ5.0CA
MXSMBJ5.0CA
Microchip Technology
TVS DIODE 5VWM 9.2VC SMBJ
DSC1001CI5-099.9990
DSC1001CI5-099.9990
Microchip Technology
MEMS OSCILLATOR SMD
JANS1N5303-1/TR
JANS1N5303-1/TR
Microchip Technology
CURRENT REGULATOR
1PMT5950BE3/TR13
1PMT5950BE3/TR13
Microchip Technology
DIODE ZENER 110V 3W DO216AA
1N5736C/TR
1N5736C/TR
Microchip Technology
VOLTAGE REGULATOR
JANTXV2N1717S
JANTXV2N1717S
Microchip Technology
TRANS NPN 100V 0.75A TO39
MCP4021-503E/MS
MCP4021-503E/MS
Microchip Technology
IC DGTL POT 50KOHM 64TAP 8MSOP
PIC18F2410-I/SP
PIC18F2410-I/SP
Microchip Technology
IC MCU 8BIT 16KB FLASH 28SPDIP
AT25160B-XHL-B
AT25160B-XHL-B
Microchip Technology
IC EEPROM 16KBIT SPI 8TSSOP
25LC160CT-I/MS
25LC160CT-I/MS
Microchip Technology
IC EEPROM 16KBIT SPI 10MHZ 8MSOP
MIC4224YM
MIC4224YM
Microchip Technology
IC GATE DRVR LOW-SIDE 8SOIC