JAN1N5623US
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Microchip Technology JAN1N5623US

Manufacturer No:
JAN1N5623US
Manufacturer:
Microchip Technology
Package:
Bulk
Datasheet:
JAN1N5623US Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 1KV 1A D5A
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1000 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.6 V @ 3 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):500 ns
Current - Reverse Leakage @ Vr:500 nA @ 1000 V
Capacitance @ Vr, F:15pF @ 12V, 1MHz
Mounting Type:Surface Mount
Package / Case:SQ-MELF, A
Supplier Device Package:D-5A
Operating Temperature - Junction:-65°C ~ 175°C
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Similar Products

Part Number JAN1N5623US JAN1N6623US   JAN1N5620US   JAN1N5621US   JAN1N5622US  
Manufacturer Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology
Product Status Active Active Active Discontinued at Digi-Key Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 1000 V 880 V 800 V 800 V 1000 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.6 V @ 3 A 1.55 V @ 1 A 1.3 V @ 3 A 1.6 V @ 3 A 1.3 V @ 3 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) 500 ns 50 ns 2 µs 300 ns 2 µs
Current - Reverse Leakage @ Vr 500 nA @ 1000 V 500 nA @ 880 V 500 nA @ 800 V 500 nA @ 800 V 500 nA @ 1000 V
Capacitance @ Vr, F 15pF @ 12V, 1MHz 10pF @ 10V, 1MHz - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SQ-MELF, A SQ-MELF, A SQ-MELF, A SQ-MELF, A SQ-MELF, A
Supplier Device Package D-5A D-5A D-5A D-5A D-5A
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 150°C -65°C ~ 200°C -65°C ~ 175°C -65°C ~ 200°C

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