JAN1N5623/TR
  • Share:

Microchip Technology JAN1N5623/TR

Manufacturer No:
JAN1N5623/TR
Manufacturer:
Microchip Technology
Package:
Tape & Reel (TR)
Datasheet:
JAN1N5623/TR Datasheet
ECAD Model:
-
Description:
RECTIFIER UFR,FRR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1000 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.6 V @ 3 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):500 ns
Current - Reverse Leakage @ Vr:500 nA @ 1 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:A, Axial
Supplier Device Package:- 
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

$7.56
96

Please send RFQ , we will respond immediately.

Similar Products

Part Number JAN1N5623/TR JAN1N6623/TR   JAN1N5620/TR   JAN1N5621/TR   JAN1N5622/TR  
Manufacturer Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology
Product Status Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 1000 V 800 V 800 V 800 V 1000 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.6 V @ 3 A 1.55 V @ 1 A 1.3 V @ 3 A 1.6 V @ 3 A 1.3 V @ 3 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) 500 ns 30 ns 2 µs 300 ns 2 µs
Current - Reverse Leakage @ Vr 500 nA @ 1 V 500 nA @ 800 V 500 nA @ 800 V 500 nA @ 800 V 500 nA @ 1 V
Capacitance @ Vr, F - - - - -
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case A, Axial A, Axial A, Axial A, Axial A, Axial
Supplier Device Package - A-PAK - - -
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 150°C -65°C ~ 200°C -65°C ~ 175°C -65°C ~ 200°C

Related Product By Categories

BAS16L,315
BAS16L,315
Nexperia USA Inc.
DIODE GEN PURP 100V 215MA SOD882
SS2060LHE_R1_00001
SS2060LHE_R1_00001
Panjit International Inc.
SOD-123HE, SKY
STTH5R06B
STTH5R06B
STMicroelectronics
DIODE GEN PURP 600V 5A DPAK
MUR180ERLG
MUR180ERLG
onsemi
DIODE GEN PURP 800V 1A AXIAL
STPSC20H12DY
STPSC20H12DY
STMicroelectronics
DIODE SCHOTTKY 1.2KV 20A TO220AC
BD840YS_L2_00001
BD840YS_L2_00001
Panjit International Inc.
SURFACE MOUNT SCHOTTKY BARRIER R
1N4148WSQ-13-F
1N4148WSQ-13-F
Diodes Incorporated
FAST SWITCHING DIODE SOD323 T&R
SRT115
SRT115
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 150V 1A TS-1
UF4004-M3/54
UF4004-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1A DO204AL
TST30H100CW
TST30H100CW
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 100V 15A TO220AB
VS-1N1206A
VS-1N1206A
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 12A DO203AA
UB8BT-E3/4W
UB8BT-E3/4W
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 8A TO263AB

Related Product By Brand

VXM7-9055-12M0000000
VXM7-9055-12M0000000
Microchip Technology
VXM7-9055-12M0000000
DSC1033AI2-025.0000
DSC1033AI2-025.0000
Microchip Technology
MEMS OSC XO 25.0000MHZ CMOS SMD
EVB-EMC1043
EVB-EMC1043
Microchip Technology
BOARD EVALUATION FOR EMC1043
JAN1N966B-1
JAN1N966B-1
Microchip Technology
DIODE ZENER 16V 500MW DO35
JAN1N4117C-1
JAN1N4117C-1
Microchip Technology
DIODE ZENER 25V DO35
2N2906AUB/TR
2N2906AUB/TR
Microchip Technology
TRANS PNP 60V 0.6A UB
ATF750LVC-15PC
ATF750LVC-15PC
Microchip Technology
IC CPLD 10MC 15NS 24DIP
A42MX09-FTQG176
A42MX09-FTQG176
Microchip Technology
IC FPGA 104 I/O 176TQFP
PIC16F876AT-I/SO
PIC16F876AT-I/SO
Microchip Technology
IC MCU 8BIT 14KB FLASH 28SOIC
MCP14628-E/MF
MCP14628-E/MF
Microchip Technology
IC GATE DRVR HALF-BRIDGE 8DFN
U643B-M
U643B-M
Microchip Technology
IC FLASHER CNTRL 8DIP
MIC2033-55AYMT-TR
MIC2033-55AYMT-TR
Microchip Technology
IC PWR SWITCH P-CHAN 1:1 6TDFN