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| Part Number | JAN1N5622/TR | JAN1N5623/TR | JAN1N6622/TR | JAN1N5822/TR | JAN1N5620/TR | JAN1N5621/TR |
|---|---|---|---|---|---|---|
| Manufacturer | Microchip Technology | Microchip Technology | Microchip Technology | Microchip Technology | Microchip Technology | Microchip Technology |
| Product Status | Active | Active | Active | Active | Active | Active |
| Diode Type | Standard | Standard | Standard | Schottky | Standard | Standard |
| Voltage - DC Reverse (Vr) (Max) | 1000 V | 1000 V | 660 V | 40 V | 800 V | 800 V |
| Current - Average Rectified (Io) | 1A | 1A | 2A | 3A | 1A | 1A |
| Voltage - Forward (Vf) (Max) @ If | 1.3 V @ 3 A | 1.6 V @ 3 A | 1.6 V @ 2 A | 500 mV @ 3 A | 1.3 V @ 3 A | 1.6 V @ 3 A |
| Speed | Standard Recovery >500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 2 µs | 500 ns | 30 ns | - | 2 µs | 300 ns |
| Current - Reverse Leakage @ Vr | 500 nA @ 1 V | 500 nA @ 1 V | 500 nA @ 660 V | 100 µA @ 40 V | 500 nA @ 800 V | 500 nA @ 800 V |
| Capacitance @ Vr, F | - | - | 10pF @ 10V, 1MHz | - | - | - |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole | Through Hole | Through Hole |
| Package / Case | A, Axial | A, Axial | A, Axial | B, Axial | A, Axial | A, Axial |
| Supplier Device Package | - | - | - | - | - | - |
| Operating Temperature - Junction | -65°C ~ 200°C | -65°C ~ 175°C | -65°C ~ 150°C | -65°C ~ 125°C | -65°C ~ 200°C | -65°C ~ 175°C |
