JAN1N5621/TR
  • Share:

Microchip Technology JAN1N5621/TR

Manufacturer No:
JAN1N5621/TR
Manufacturer:
Microchip Technology
Package:
Tape & Reel (TR)
Datasheet:
JAN1N5621/TR Datasheet
ECAD Model:
-
Description:
RECTIFIER UFR,FRR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):800 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.6 V @ 3 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):300 ns
Current - Reverse Leakage @ Vr:500 nA @ 800 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:A, Axial
Supplier Device Package:- 
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

$5.44
153

Please send RFQ , we will respond immediately.

Similar Products

Part Number JAN1N5621/TR JAN1N5622/TR   JAN1N5623/TR   JAN1N6621/TR   JAN1N5620/TR  
Manufacturer Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology
Product Status Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 800 V 1000 V 1000 V 440 V 800 V
Current - Average Rectified (Io) 1A 1A 1A 2A 1A
Voltage - Forward (Vf) (Max) @ If 1.6 V @ 3 A 1.3 V @ 3 A 1.6 V @ 3 A 1.6 V @ 2 A 1.3 V @ 3 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) 300 ns 2 µs 500 ns 30 ns 2 µs
Current - Reverse Leakage @ Vr 500 nA @ 800 V 500 nA @ 1 V 500 nA @ 1 V 500 nA @ 440 V 500 nA @ 800 V
Capacitance @ Vr, F - - - 10pF @ 10V, 1MHz -
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case A, Axial A, Axial A, Axial A, Axial A, Axial
Supplier Device Package - - - - -
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 200°C -65°C ~ 175°C -65°C ~ 150°C -65°C ~ 200°C

Related Product By Categories

ER2J
ER2J
SMC Diode Solutions
DIODE GEN PURP 600V 2A SMB
VS-40HF120
VS-40HF120
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1.2KV 40A DO203AB
IMBD4148-E3-18
IMBD4148-E3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 150MA SOT23
SE15FDHM3/I
SE15FDHM3/I
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 1.5A DO219AB
6A10B-G
6A10B-G
Comchip Technology
DIODE GEN PURP 1KV 6A R6
EGP30B-E3/54
EGP30B-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 3A GP20
SK12E3/TR13
SK12E3/TR13
Microsemi Corporation
DIODE SCHOTTKY 20V 1A DO214AA
SS1H10HE3_A/I
SS1H10HE3_A/I
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 1A DO214AC
UES2602
UES2602
Microchip Technology
DIODE GEN PURP 100V 30A TO204AA
SS36L R3G
SS36L R3G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 3A SUB SMA
1N5397GHB0G
1N5397GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1.5A DO204AC
APD245VG-E1
APD245VG-E1
Diodes Incorporated
DIODE SCHOTTKY

Related Product By Brand

DSC1001DL1-037.1250
DSC1001DL1-037.1250
Microchip Technology
MEMS OSC XO 37.1250MHZ CMOS SMD
DSC400-0444Q0009KI2T
DSC400-0444Q0009KI2T
Microchip Technology
MEMS OSC XO 2.25V-3.6V 20SMD
CDLL4614
CDLL4614
Microchip Technology
DIODE ZENER 1.8V 500MW DO213AA
1N6025A
1N6025A
Microchip Technology
DIODE ZENER 110V 500MW DO35
PIC32MZ1024EFG100-E/GJX
PIC32MZ1024EFG100-E/GJX
Microchip Technology
IC MCU 32BIT 1MB FLASH 100TFBGA
TS87C51RC2-VCB
TS87C51RC2-VCB
Microchip Technology
IC MCU 8BIT 32KB OTP 44PLCC
SY89323LMG-TR
SY89323LMG-TR
Microchip Technology
IC TRNSLTR UNIDIRECTIONAL 8MLF
AT29C040A-90TU
AT29C040A-90TU
Microchip Technology
IC FLASH 4MBIT PARALLEL 32TSOP
TC4451VAT
TC4451VAT
Microchip Technology
IC GATE DRVR LOW-SIDE TO220-5
SY88912LMI
SY88912LMI
Microchip Technology
IC LASER DRVR 3.2GB 3.45V 16MLF
MIC29502WT
MIC29502WT
Microchip Technology
IC REG LINEAR POS ADJ 5A TO220-5
MCP1811AT-030/TT
MCP1811AT-030/TT
Microchip Technology
IC REG LINEAR 3V 150MA SOT23-3