JAN1N5617
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Microchip Technology JAN1N5617

Manufacturer No:
JAN1N5617
Manufacturer:
Microchip Technology
Package:
Bulk
Datasheet:
JAN1N5617 Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 400V 1A AXIAL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):400 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.6 V @ 3 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):150 ns
Current - Reverse Leakage @ Vr:500 nA @ 400 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:A, Axial
Supplier Device Package:- 
Operating Temperature - Junction:-65°C ~ 175°C
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$4.29
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Similar Products

Part Number JAN1N5617 JAN1N5619   JAN1N5417   JAN1N5614   JAN1N5616  
Manufacturer Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology
Product Status Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 400 V 600 V 200 V 200 V 400 V
Current - Average Rectified (Io) 1A 1A 3A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.6 V @ 3 A 1.6 V @ 3 A 1.5 V @ 9 A 1.3 V @ 3 A 1.3 V @ 3 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) 150 ns 250 ns 150 ns 2 µs 2 µs
Current - Reverse Leakage @ Vr 500 nA @ 400 V 500 nA @ 800 V 1 µA @ 200 V 500 nA @ 200 V 500 nA @ 400 V
Capacitance @ Vr, F - - - - -
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case A, Axial A, Axial B, Axial A, Axial A, Axial
Supplier Device Package - - - - -
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 200°C -65°C ~ 200°C

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