JAN1N5614
  • Share:

Microchip Technology JAN1N5614

Manufacturer No:
JAN1N5614
Manufacturer:
Microchip Technology
Package:
Bulk
Datasheet:
JAN1N5614 Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 200V 1A AXIAL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.3 V @ 3 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):2 µs
Current - Reverse Leakage @ Vr:500 nA @ 200 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:A, Axial
Supplier Device Package:- 
Operating Temperature - Junction:-65°C ~ 200°C
0 Remaining View Similar

In Stock

$4.22
223

Please send RFQ , we will respond immediately.

Similar Products

Part Number JAN1N5614 JAN1N5617   JAN1N5616   JAN1N5619   JAN1N3614  
Manufacturer Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology
Product Status Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 400 V 400 V 600 V 800 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.3 V @ 3 A 1.6 V @ 3 A 1.3 V @ 3 A 1.6 V @ 3 A 1.1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) 2 µs 150 ns 2 µs 250 ns -
Current - Reverse Leakage @ Vr 500 nA @ 200 V 500 nA @ 400 V 500 nA @ 400 V 500 nA @ 800 V 1 µA @ 800 V
Capacitance @ Vr, F - - - - -
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case A, Axial A, Axial A, Axial A, Axial A, Axial
Supplier Device Package - - - - -
Operating Temperature - Junction -65°C ~ 200°C -65°C ~ 175°C -65°C ~ 200°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

RURP3050
RURP3050
Harris Corporation
RECTIFIER DIODE
PAD5DFN 8L
PAD5DFN 8L
Linear Integrated Systems, Inc.
DIODE GEN PURP 30V 10MA 8DFN
STPSC20065DI
STPSC20065DI
STMicroelectronics
DIODE SCHOTTKY 650V 20A TO220AC
PMEG100T20ELR-QX
PMEG100T20ELR-QX
Nexperia USA Inc.
PMEG100T20ELR-Q/SOD123W/SOD2
S1DL RVG
S1DL RVG
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A SUB SMA
S2G-M3/52T
S2G-M3/52T
Vishay General Semiconductor - Diodes Division
DIODE GPP 1.5A 400V DO-214AA
B330AQ-13-F
B330AQ-13-F
Diodes Incorporated
SCHOTTKY RECTIFIER SMA T&R 5K
VB20120S-E3/4W
VB20120S-E3/4W
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 120V 20A TO263AB
TSF20H120C-S
TSF20H120C-S
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 120V 10A ITO220AB
MBRF10H60-E3/45
MBRF10H60-E3/45
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 60V 10A ITO220AC
SBL1040-E3/45
SBL1040-E3/45
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 40V 10A TO220AC
1SR153-400T-31
1SR153-400T-31
Rohm Semiconductor
DIODE GEN PURP 400V 1A DO204AL

Related Product By Brand

MA15KP26CAE3
MA15KP26CAE3
Microchip Technology
TVS DIODE 26VWM 44VC DO204AR
MXSMBG12CAE3
MXSMBG12CAE3
Microchip Technology
TVS DIODE 12VWM 19.9VC SMBG
DSC1122BI2-075.0000T
DSC1122BI2-075.0000T
Microchip Technology
MEMS OSC XO 75.0000MHZ LVPECL
APT2X100DQ60J
APT2X100DQ60J
Microchip Technology
DIODE MODULE 600V 100A ISOTOP
1PMT5946/TR7
1PMT5946/TR7
Microchip Technology
DIODE ZENER 75V 3W DO216AA
1N5746D
1N5746D
Microchip Technology
DIODE ZENER 27V 500MW DO35
MAX24610EXG2
MAX24610EXG2
Microchip Technology
IC CLK MULT/ATTENUATOR 10OUT
PIC24F08KL302-I/ML
PIC24F08KL302-I/ML
Microchip Technology
IC MCU 16BIT 8KB FLASH 28QFN
DSPIC33FJ06GS102AT-I/SO
DSPIC33FJ06GS102AT-I/SO
Microchip Technology
IC MCU 16BIT 6KB FLASH 28SOIC
LAN8742-CZ
LAN8742-CZ
Microchip Technology
IC TRANSCEIVER FULL 1/1 24SQFN
SY58018UMG-TR
SY58018UMG-TR
Microchip Technology
IC MULTIPLEXER 1 X 2:1 16MLF
AT24C512-10PU-1.8
AT24C512-10PU-1.8
Microchip Technology
IC EEPROM 512KBIT I2C 8DIP