JAN1N5614
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Microchip Technology JAN1N5614

Manufacturer No:
JAN1N5614
Manufacturer:
Microchip Technology
Package:
Bulk
Datasheet:
JAN1N5614 Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 200V 1A AXIAL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.3 V @ 3 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):2 µs
Current - Reverse Leakage @ Vr:500 nA @ 200 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:A, Axial
Supplier Device Package:- 
Operating Temperature - Junction:-65°C ~ 200°C
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$4.22
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Similar Products

Part Number JAN1N5614 JAN1N5617   JAN1N5616   JAN1N5619   JAN1N3614  
Manufacturer Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology
Product Status Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 400 V 400 V 600 V 800 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.3 V @ 3 A 1.6 V @ 3 A 1.3 V @ 3 A 1.6 V @ 3 A 1.1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) 2 µs 150 ns 2 µs 250 ns -
Current - Reverse Leakage @ Vr 500 nA @ 200 V 500 nA @ 400 V 500 nA @ 400 V 500 nA @ 800 V 1 µA @ 800 V
Capacitance @ Vr, F - - - - -
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case A, Axial A, Axial A, Axial A, Axial A, Axial
Supplier Device Package - - - - -
Operating Temperature - Junction -65°C ~ 200°C -65°C ~ 175°C -65°C ~ 200°C -65°C ~ 175°C -65°C ~ 175°C

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