JAN1N5550/TR
  • Share:

Microchip Technology JAN1N5550/TR

Manufacturer No:
JAN1N5550/TR
Manufacturer:
Microchip Technology
Package:
Tape & Reel (TR)
Datasheet:
JAN1N5550/TR Datasheet
ECAD Model:
-
Description:
STD RECTIFIER
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):3A
Voltage - Forward (Vf) (Max) @ If:1.2 V @ 9 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):2 µs
Current - Reverse Leakage @ Vr:1 µA @ 200 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:B, Axial
Supplier Device Package:- 
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

$5.83
154

Please send RFQ , we will respond immediately.

Similar Products

Part Number JAN1N5550/TR JAN1N5552/TR   JAN1N5551/TR   JAN1N5553/TR   JAN1N5554/TR  
Manufacturer Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology
Product Status Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 600 V 400 V 800 V 1000 V
Current - Average Rectified (Io) 3A 3A 3A 3A 3A
Voltage - Forward (Vf) (Max) @ If 1.2 V @ 9 A 1.2 V @ 9 A 1.2 V @ 9 A 1.3 V @ 9 A 1.3 V @ 9 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) 2 µs 2 µs 2 µs 2 µs 2 µs
Current - Reverse Leakage @ Vr 1 µA @ 200 V 1 µA @ 600 V 1 µA @ 400 V 1 µA @ 800 V 1 µA @ 1 V
Capacitance @ Vr, F - - - - -
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case B, Axial B, Axial B, Axial B, Axial B, Axial
Supplier Device Package - - - - -
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

ER3D_R1_00001
ER3D_R1_00001
Panjit International Inc.
SMC, SUPER
BAS70LT1G
BAS70LT1G
onsemi
DIODE SCHOTTKY 70V 70MA SOT23-3
B250AQ-13-F
B250AQ-13-F
Diodes Incorporated
DIODE SCHOTTKY 50V 2A SMA
BYM10-400HE3/96
BYM10-400HE3/96
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1A DO213AB
SS34HM3_A/I
SS34HM3_A/I
Vishay General Semiconductor - Diodes Division
3A 40V SM SCHOTTKY RECT SMC
VS-20MQ060NTRPBF
VS-20MQ060NTRPBF
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 60V 2A DO214AC
85HF160
85HF160
Solid State Inc.
DO5 85 AMP SILICON RECTFIER KK
DL4934-13
DL4934-13
Diodes Incorporated
DIODE GEN PURP 100V 1A MELF
MA2Q73600L
MA2Q73600L
Panasonic Electronic Components
DIODE SCHOTTKY 40V 1A NMINIP2
SS210LHR3G
SS210LHR3G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 100V 2A SUB SMA
SR1020HC0G
SR1020HC0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 20V 10A TO220AB
RB521CM-30T2R
RB521CM-30T2R
Rohm Semiconductor
DIODE SCHOTTKY 30V 100MA VMN2M

Related Product By Brand

SMBJ18CAE3/TR13
SMBJ18CAE3/TR13
Microchip Technology
TVS DIODE 18VWM 29.2VC SMBJ
1N6069A
1N6069A
Microchip Technology
TVS DIODE 150VWM 261VC DO13
MPLAD15KP7.5A
MPLAD15KP7.5A
Microchip Technology
TVS DIODE 7.5VWM 12.9VC PLAD
MXRT100KP58AE3
MXRT100KP58AE3
Microchip Technology
TVS DIODE 58VWM 114VC CASE 5A
DSC1123BI2-148.3520
DSC1123BI2-148.3520
Microchip Technology
MEMS OSC XO 148.3520MHZ LVDS SMD
JANTX1N4966US/TR
JANTX1N4966US/TR
Microchip Technology
VOLTAGE REGULATOR
PIC16F716-E/P
PIC16F716-E/P
Microchip Technology
IC MCU 8BIT 3.5KB FLASH 18DIP
PIC12C672T-10I/SM
PIC12C672T-10I/SM
Microchip Technology
IC MCU 8BIT 3.5KB OTP 8SOIJ
ATXMEGA64D4-MN
ATXMEGA64D4-MN
Microchip Technology
IC MCU 8/16BIT 64KB FLASH 44VQFN
ATMEGA328PB-ABTVAO
ATMEGA328PB-ABTVAO
Microchip Technology
IC MCU 8BIT 32KB FLASH 32TQFP
MCP14A0452T-E/SN
MCP14A0452T-E/SN
Microchip Technology
IC GATE DRVR LOW-SIDE 8SOIC
EMC1412-1-ACZL-TR
EMC1412-1-ACZL-TR
Microchip Technology
SENSOR DIGITAL -40C-125C 8TSSOP