JAN1N5418US/TR
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Microchip Technology JAN1N5418US/TR

Manufacturer No:
JAN1N5418US/TR
Manufacturer:
Microchip Technology
Package:
Tape & Reel (TR)
Datasheet:
JAN1N5418US/TR Datasheet
ECAD Model:
-
Description:
RECTIFIER UFR,FRR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):400 V
Current - Average Rectified (Io):3A
Voltage - Forward (Vf) (Max) @ If:1.5 V @ 9 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):150 ns
Current - Reverse Leakage @ Vr:1 µA @ 400 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:SQ-MELF, B
Supplier Device Package:D-5B
Operating Temperature - Junction:-65°C ~ 175°C
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In Stock

$8.26
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Similar Products

Part Number JAN1N5418US/TR JAN1N5419US/TR   JAN1N5415US/TR   JAN1N5416US/TR   JAN1N5417US/TR  
Manufacturer Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology
Product Status Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 400 V 500 V 50 V 100 V 200 V
Current - Average Rectified (Io) 3A 3A 3A 3A 3A
Voltage - Forward (Vf) (Max) @ If 1.5 V @ 9 A 1.5 V @ 9 A 1.5 V @ 9 A 1.5 V @ 9 A 1.5 V @ 9 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 150 ns 250 ns 150 ns 150 ns 150 ns
Current - Reverse Leakage @ Vr 1 µA @ 400 V 1 µA @ 500 V 1 µA @ 50 V 1 µA @ 100 V 1 µA @ 200 V
Capacitance @ Vr, F - - - - -
Mounting Type Surface Mount Surface Mount Through Hole Through Hole Surface Mount
Package / Case SQ-MELF, B SQ-MELF, B B, Axial B, Axial SQ-MELF, B
Supplier Device Package D-5B D-5B - - B, SQ-MELF
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

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