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| Part Number | JAN1N5416US | JAN1N5616US |
|---|---|---|
| Manufacturer | Microchip Technology | Microchip Technology |
| Product Status | Active | Active |
| Diode Type | Standard | Standard |
| Voltage - DC Reverse (Vr) (Max) | 100 V | 400 V |
| Current - Average Rectified (Io) | 3A | 1A |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 9 A | 1.3 V @ 3 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 150 ns | 2 µs |
| Current - Reverse Leakage @ Vr | 1 µA @ 100 V | 500 nA @ 400 V |
| Capacitance @ Vr, F | - | - |
| Mounting Type | Through Hole | Surface Mount |
| Package / Case | B, Axial | SQ-MELF, A |
| Supplier Device Package | - | D-5A |
| Operating Temperature - Junction | -65°C ~ 175°C | -65°C ~ 200°C |
