JAN1N5415/TR
  • Share:

Microchip Technology JAN1N5415/TR

Manufacturer No:
JAN1N5415/TR
Manufacturer:
Microchip Technology
Package:
Tape & Reel (TR)
Datasheet:
JAN1N5415/TR Datasheet
ECAD Model:
-
Description:
RECTIFIER UFR,FRR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):50 V
Current - Average Rectified (Io):3A
Voltage - Forward (Vf) (Max) @ If:1.5 V @ 9 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):150 ns
Current - Reverse Leakage @ Vr:1 µA @ 50 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:B, Axial
Supplier Device Package:- 
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

$6.36
22

Please send RFQ , we will respond immediately.

Similar Products

Part Number JAN1N5415/TR JAN1N5615/TR   JAN1N5418/TR   JAN1N5416/TR   JAN1N5417/TR   JAN1N5419/TR  
Manufacturer Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology
Product Status Active Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 50 V 200 V 400 V 100 V 200 V 500 V
Current - Average Rectified (Io) 3A 1A 3A 3A 3A 3A
Voltage - Forward (Vf) (Max) @ If 1.5 V @ 9 A 1.6 V @ 3 A 1.5 V @ 9 A 1.5 V @ 9 A 1.5 V @ 9 A 1.5 V @ 9 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 150 ns 150 ns 150 ns 150 ns 150 ns 250 ns
Current - Reverse Leakage @ Vr 1 µA @ 50 V 500 nA @ 200 V 1 µA @ 400 V 1 µA @ 100 V 1 µA @ 200 V 1 µA @ 500 V
Capacitance @ Vr, F - - - - - -
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case B, Axial A, Axial B, Axial B, Axial B, Axial B, Axial
Supplier Device Package - - - - - -
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

ES2JSMA
ES2JSMA
Diotec Semiconductor
DIODE SFR SMA 600V 2A
MUR360S V7G
MUR360S V7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 3A DO214AB
BAV19W_R1_00001
BAV19W_R1_00001
Panjit International Inc.
SOD-123, SWITCHING
TSSW3U45
TSSW3U45
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 45V 3A SOD123W
B2100Q-13-F
B2100Q-13-F
Diodes Incorporated
DIODE SCHOTTKY 100V 2A SMB
1N4148-1E3
1N4148-1E3
Microchip Technology
GLASS AXIAL SWITCHING DIODE
JANTXV1N5623US/TR
JANTXV1N5623US/TR
Microchip Technology
RECTIFIER UFR,FRR
20F50
20F50
Solid State Inc.
20 AMP SILCON RECTIFIER DO4 KK
MBR160
MBR160
onsemi
DIODE SCHOTTKY 60V 1A AXIAL
1N4004GPHM3/73
1N4004GPHM3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1A DO204AL
MBRF1645HC0G
MBRF1645HC0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 45V 16A ITO220AC
CD214A-F150
CD214A-F150
Bourns Inc.
DIODE GEN PURP 50V 1A DO214AC

Related Product By Brand

MXLP4KE11CA
MXLP4KE11CA
Microchip Technology
TVS DIODE 9.4VWM 15.6VC DO204AL
DSC1001DE1-040.0000T
DSC1001DE1-040.0000T
Microchip Technology
MEMS OSC XO 40.0000MHZ CMOS SMD
AT91SAM9261-EK
AT91SAM9261-EK
Microchip Technology
AT91SAM9261 EVAL BRD
JANSR2N2218A
JANSR2N2218A
Microchip Technology
TRANS NPN 50V 0.8A TO39
ATTINY22L-1SI
ATTINY22L-1SI
Microchip Technology
IC MCU 8BIT 2KB FLASH 8SOIC
PIC16LC65AT-04/PQ
PIC16LC65AT-04/PQ
Microchip Technology
IC MCU 8BIT 7KB OTP 44MQFP
AT89LV51-12JI
AT89LV51-12JI
Microchip Technology
IC MCU 8BIT 4KB FLASH 44PLCC
ATTINY13A-SHR
ATTINY13A-SHR
Microchip Technology
IC MCU 8BIT 1KB FLASH 8SOIC
SY10EP58VKG
SY10EP58VKG
Microchip Technology
IC MULTIPLEXER 1 X 2:1 8MSOP
UCS2112T-1-V/G4
UCS2112T-1-V/G4
Microchip Technology
IC PWR SWITCH 1:1 20QFN
TC54VN2102EZB
TC54VN2102EZB
Microchip Technology
IC SUPERVISOR 1 CHANNEL TO92-3
LM2575YWM-TR
LM2575YWM-TR
Microchip Technology
IC REG BUCK ADJUSTABLE 1A 24SOIC