JAN1N4249
  • Share:

Microchip Technology JAN1N4249

Manufacturer No:
JAN1N4249
Manufacturer:
Microchip Technology
Package:
Bulk
Datasheet:
JAN1N4249 Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 1KV 1A AXIAL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1000 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.3 V @ 3 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):5 µs
Current - Reverse Leakage @ Vr:1 µA @ 1000 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:A, Axial
Supplier Device Package:- 
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

$5.37
32

Please send RFQ , we will respond immediately.

Similar Products

Part Number JAN1N4249 JAN1N4245   JAN1N4246   JAN1N4247   JAN1N4248  
Manufacturer Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology
Product Status Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 1000 V 200 V 400 V 600 V 800 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.3 V @ 3 A 1.3 V @ 3 A 1.3 V @ 3 A 1.3 V @ 3 A 1.3 V @ 3 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) 5 µs 5 µs 5 µs 5 µs 5 µs
Current - Reverse Leakage @ Vr 1 µA @ 1000 V 1 µA @ 200 V 1 µA @ 400 V 1 µA @ 600 V 1 µA @ 800 V
Capacitance @ Vr, F - - - - -
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case A, Axial A, Axial A, Axial A, Axial A, Axial
Supplier Device Package - - - - -
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

PMEG2020AEA,115
PMEG2020AEA,115
Nexperia USA Inc.
DIODE SCHOTTKY 20V 2A SOD323
BAT54QC-QZ
BAT54QC-QZ
Nexperia USA Inc.
BAT54QC-Q/SOT8009/DFN1412D-3
1SS119-04TJ-E-Q
1SS119-04TJ-E-Q
Renesas Electronics America Inc
DIODE FOR HIGH SPEED SWITCHING
RS1JL M2G
RS1JL M2G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 800MA SUBSMA
PMEG3020BEP-QX
PMEG3020BEP-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
VS-100BGQ045HF4
VS-100BGQ045HF4
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 45V 100A POWERTAB
8EWF04STRL
8EWF04STRL
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 8A DPAK
SB020-E3/54
SB020-E3/54
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 20V 600MA MPG06
SE10PG-E3/85A
SE10PG-E3/85A
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1A DO220AA
SSA24HE3/5AT
SSA24HE3/5AT
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 40V 2A DO214AC
STTH15S12W
STTH15S12W
STMicroelectronics
DIODE GEN PURP 1.2KV 15A DO247
ESH3C M6G
ESH3C M6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 3A DO214AB

Related Product By Brand

MXSMCJLCE16A
MXSMCJLCE16A
Microchip Technology
TVS DIODE 16VWM 26VC DO214AB
DSC6001HE1A-025.0000
DSC6001HE1A-025.0000
Microchip Technology
MEMS OSC XO 25.0000MHZ CMOS SMD
DSC6101MI1A-008.0000T
DSC6101MI1A-008.0000T
Microchip Technology
MEMS OSC XO 8.0000MHZ CMOS SMD
DSC6101JI1B-007K085T
DSC6101JI1B-007K085T
Microchip Technology
OSC MEMS LOW PWR SMD
JANTX1N6323CUS
JANTX1N6323CUS
Microchip Technology
DIODE ZENER 9.1V 500MW MELF
JANS2N3634
JANS2N3634
Microchip Technology
TRANS PNP 140V 10UA TO39
ATF1504ASVL-20AI100
ATF1504ASVL-20AI100
Microchip Technology
IC CPLD 64MC 20NS 100TQFP
PIC16C554-20E/P
PIC16C554-20E/P
Microchip Technology
IC MCU 8BIT 896B OTP 18DIP
24LC04BT/ST
24LC04BT/ST
Microchip Technology
IC EEPROM 4KBIT I2C 8TSSOP
24LC08B/ST
24LC08B/ST
Microchip Technology
IC EEPROM 8KBIT I2C 8TSSOP
HV633PG-G
HV633PG-G
Microchip Technology
IC DRVR 32CH 80V 64QFP
ATECC608A-SSHDA-B
ATECC608A-SSHDA-B
Microchip Technology
IC AUTHENTICATION CHIP 8SOIC