JAN1N4249
  • Share:

Microchip Technology JAN1N4249

Manufacturer No:
JAN1N4249
Manufacturer:
Microchip Technology
Package:
Bulk
Datasheet:
JAN1N4249 Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 1KV 1A AXIAL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1000 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.3 V @ 3 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):5 µs
Current - Reverse Leakage @ Vr:1 µA @ 1000 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:A, Axial
Supplier Device Package:- 
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

$5.37
32

Please send RFQ , we will respond immediately.

Similar Products

Part Number JAN1N4249 JAN1N4245   JAN1N4246   JAN1N4247   JAN1N4248  
Manufacturer Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology
Product Status Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 1000 V 200 V 400 V 600 V 800 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.3 V @ 3 A 1.3 V @ 3 A 1.3 V @ 3 A 1.3 V @ 3 A 1.3 V @ 3 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) 5 µs 5 µs 5 µs 5 µs 5 µs
Current - Reverse Leakage @ Vr 1 µA @ 1000 V 1 µA @ 200 V 1 µA @ 400 V 1 µA @ 600 V 1 µA @ 800 V
Capacitance @ Vr, F - - - - -
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case A, Axial A, Axial A, Axial A, Axial A, Axial
Supplier Device Package - - - - -
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

HS1DAL
HS1DAL
Taiwan Semiconductor Corporation
50NS, 1A, 200V, HIGH EFFICIENT R
MUR115G
MUR115G
onsemi
DIODE GEN PURP 150V 1A AXIAL
MBRS3200T3G
MBRS3200T3G
onsemi
DIODE SCHOTTKY 200V 3A SMB
1N5406-E3/51
1N5406-E3/51
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 3A DO201AD
SB10-03A3-BT
SB10-03A3-BT
onsemi
DIODE SCHOTTKY 30V 1A DO41
LL101C-7
LL101C-7
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 40V 30MA SOD80
NRVBA1H100T3G
NRVBA1H100T3G
onsemi
DIODE SCHOTTKY 100V 1A SMA
HERAF1605G C0G
HERAF1605G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 16A ITO220AC
UGA8120HC0G
UGA8120HC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 8A TO220AC
UGF8JHC0G
UGF8JHC0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 8A ITO220AC
BA158-AP
BA158-AP
Micro Commercial Co
DIODE GPP 1A DO-41
SCS105KGC
SCS105KGC
Rohm Semiconductor
DIODE SCHOTTKY 1.2KV 5A TO220AC

Related Product By Brand

MP4KE62AE3
MP4KE62AE3
Microchip Technology
TVS DIODE 53VWM 85VC DO204AL
DSC1001DE1-030.3779
DSC1001DE1-030.3779
Microchip Technology
MEMS OSC XO 30.3779MHZ CMOS SMD
DSC6101JI2A-024.8060
DSC6101JI2A-024.8060
Microchip Technology
MEMS OSC XO 24.0000MHZ CMOS SMD
JAN1N4249/TR
JAN1N4249/TR
Microchip Technology
RECTIFIER UFR,FRR
JANTXV1N4570AUR-1
JANTXV1N4570AUR-1
Microchip Technology
DIODE ZENER 6.4V 500MW DO213AA
JANTX1N5544BUR-1/TR
JANTX1N5544BUR-1/TR
Microchip Technology
VOLTAGE REGULATOR
SY89221UHY-TR
SY89221UHY-TR
Microchip Technology
2.5V/3.3V INTEGRATED DIVIDER + F
PIC24FJ128GB610-E/BG
PIC24FJ128GB610-E/BG
Microchip Technology
IC MCU 16BIT 128KB FLSH 121TFBGA
MCW1001A-I/SS
MCW1001A-I/SS
Microchip Technology
IC INTERFACE SPECIALIZED 28SSOP
MCP1316MT-46LE/OTVAO
MCP1316MT-46LE/OTVAO
Microchip Technology
IC SUPERVISOR 1 CHANNEL SOT23-5
TC2185-1.8VCTTR
TC2185-1.8VCTTR
Microchip Technology
IC REG LINEAR 1.8V 150MA SOT23-5
MCP1812BT-018/OT
MCP1812BT-018/OT
Microchip Technology
IC REG LINEAR 1.8V 300MA SOT23-5