JAN1N4248
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Microchip Technology JAN1N4248

Manufacturer No:
JAN1N4248
Manufacturer:
Microchip Technology
Package:
Bulk
Datasheet:
JAN1N4248 Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 800V 1A AXIAL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):800 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.3 V @ 3 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):5 µs
Current - Reverse Leakage @ Vr:1 µA @ 800 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:A, Axial
Supplier Device Package:- 
Operating Temperature - Junction:-65°C ~ 175°C
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$5.03
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Similar Products

Part Number JAN1N4248 JAN1N4249   JAN1N4245   JAN1N4246   JAN1N4247  
Manufacturer Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology
Product Status Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 800 V 1000 V 200 V 400 V 600 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.3 V @ 3 A 1.3 V @ 3 A 1.3 V @ 3 A 1.3 V @ 3 A 1.3 V @ 3 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) 5 µs 5 µs 5 µs 5 µs 5 µs
Current - Reverse Leakage @ Vr 1 µA @ 800 V 1 µA @ 1000 V 1 µA @ 200 V 1 µA @ 400 V 1 µA @ 600 V
Capacitance @ Vr, F - - - - -
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case A, Axial A, Axial A, Axial A, Axial A, Axial
Supplier Device Package - - - - -
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

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