JAN1N4246
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Microchip Technology JAN1N4246

Manufacturer No:
JAN1N4246
Manufacturer:
Microchip Technology
Package:
Bulk
Datasheet:
JAN1N4246 Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 400V 1A AXIAL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):400 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.3 V @ 3 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):5 µs
Current - Reverse Leakage @ Vr:1 µA @ 400 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:A, Axial
Supplier Device Package:- 
Operating Temperature - Junction:-65°C ~ 175°C
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$3.43
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Similar Products

Part Number JAN1N4246 JAN1N4248   JAN1N4249   JAN1N4946   JAN1N4247   JAN1N4245  
Manufacturer Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology Microchip Technology
Product Status Active Active Active Active Active Active
Diode Type Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 400 V 800 V 1000 V 600 V 600 V 200 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.3 V @ 3 A 1.3 V @ 3 A 1.3 V @ 3 A 1.3 V @ 1 A 1.3 V @ 3 A 1.3 V @ 3 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) 5 µs 5 µs 5 µs 250 ns 5 µs 5 µs
Current - Reverse Leakage @ Vr 1 µA @ 400 V 1 µA @ 800 V 1 µA @ 1000 V 1 µA @ 600 V 1 µA @ 600 V 1 µA @ 200 V
Capacitance @ Vr, F - - - - - -
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case A, Axial A, Axial A, Axial A, Axial A, Axial A, Axial
Supplier Device Package - - - - - -
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

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