JAN1N4150-1
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Microchip Technology JAN1N4150-1

Manufacturer No:
JAN1N4150-1
Manufacturer:
Microchip Technology
Package:
Bulk
Datasheet:
JAN1N4150-1 Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 50V 200MA DO35
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Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):50 V
Current - Average Rectified (Io):200mA
Voltage - Forward (Vf) (Max) @ If:1 V @ 200 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):4 ns
Current - Reverse Leakage @ Vr:100 nA @ 50 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:DO-204AH, DO-35, Axial
Supplier Device Package:DO-35
Operating Temperature - Junction:-65°C ~ 175°C
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Similar Products

Part Number JAN1N4150-1 JAN1N4153-1  
Manufacturer Microchip Technology Microchip Technology
Product Status Active Active
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 50 V 75 V
Current - Average Rectified (Io) 200mA 150mA (DC)
Voltage - Forward (Vf) (Max) @ If 1 V @ 200 mA 880 mV @ 20 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 4 ns 4 ns
Current - Reverse Leakage @ Vr 100 nA @ 50 V 50 nA @ 50 V
Capacitance @ Vr, F - 2pF @ 0V, 1MHz
Mounting Type Through Hole Through Hole
Package / Case DO-204AH, DO-35, Axial DO-204AH, DO-35, Axial
Supplier Device Package DO-35 DO-35
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C

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