Microchip Technology-DN3135K1-G - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	350 V
Current - Continuous Drain (Id) @ 25°C:	72mA (Tj)
Drive Voltage (Max Rds On, Min Rds On):	0V
Rds On (Max) @ Id, Vgs:	35Ohm @ 150mA, 0V
Vgs(th) (Max) @ Id:	-
Gate Charge (Qg) (Max) @ Vgs:	-
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	120 pF @ 25 V
FET Feature:	Depletion Mode
Power Dissipation (Max):	360mW (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	SOT-23-3
Package / Case:	TO-236-3, SC-59, SOT-23-3

Microchip Technology DN3135K1-G