Microchip Technology-DN2625K4-G - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	250 V
Current - Continuous Drain (Id) @ 25°C:	1.1A (Tj)
Drive Voltage (Max Rds On, Min Rds On):	0V
Rds On (Max) @ Id, Vgs:	3.5Ohm @ 1A, 0V
Vgs(th) (Max) @ Id:	-
Gate Charge (Qg) (Max) @ Vgs:	7.04 nC @ 1.5 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	1000 pF @ 25 V
FET Feature:	Depletion Mode
Power Dissipation (Max):	-
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	TO-252, (D-Pak)
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63

Microchip Technology DN2625K4-G