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| Part Number | DN2530N3-G | DN2535N3-G | DN2540N3-G | DN2530N8-G |
|---|---|---|---|---|
| Manufacturer | Microchip Technology | Microchip Technology | Microchip Technology | Microchip Technology |
| Product Status | Active | Active | Active | Active |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 300 V | 350 V | 400 V | 300 V |
| Current - Continuous Drain (Id) @ 25°C | 175mA (Tj) | 120mA (Tj) | 120mA (Tj) | 200mA (Tj) |
| Drive Voltage (Max Rds On, Min Rds On) | 0V | 0V | 0V | 0V |
| Rds On (Max) @ Id, Vgs | 12Ohm @ 150mA, 0V | 25Ohm @ 120mA, 0V | 25Ohm @ 120mA, 0V | 12Ohm @ 150mA, 0V |
| Vgs(th) (Max) @ Id | - | - | - | - |
| Gate Charge (Qg) (Max) @ Vgs | - | - | - | - |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 300 pF @ 25 V | 300 pF @ 25 V | 300 pF @ 25 V | 300 pF @ 25 V |
| FET Feature | Depletion Mode | Depletion Mode | Depletion Mode | Depletion Mode |
| Power Dissipation (Max) | 740mW (Ta) | 1W (Tc) | 1W (Tc) | 1.6W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole | Through Hole | Through Hole | Surface Mount |
| Supplier Device Package | TO-92 (TO-226) | TO-92 (TO-226) | TO-92 (TO-226) | TO-243AA (SOT-89) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) | TO-226-3, TO-92-3 (TO-226AA) | TO-226-3, TO-92-3 (TO-226AA) | TO-243AA |
