Microchip Technology-DN2450N8-G - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	500 V
Current - Continuous Drain (Id) @ 25°C:	230mA (Tj)
Drive Voltage (Max Rds On, Min Rds On):	0V
Rds On (Max) @ Id, Vgs:	10Ohm @ 300mA, 0V
Vgs(th) (Max) @ Id:	-
Gate Charge (Qg) (Max) @ Vgs:	-
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	200 pF @ 25 V
FET Feature:	Depletion Mode
Power Dissipation (Max):	1.6W (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	TO-243AA (SOT-89)
Package / Case:	TO-243AA

Microchip Technology DN2450N8-G