Microchip Technology-APTMC120AM55CT1AG - Transistors - FETs, MOSFETs - Arrays Product Specifications and Latest Quotes

FET Type:	2 N-Channel (Half Bridge)
FET Feature:	Silicon Carbide (SiC)
Drain to Source Voltage (Vdss):	1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C:	55A (Tc)
Rds On (Max) @ Id, Vgs:	49mOhm @ 40A, 20V
Vgs(th) (Max) @ Id:	2.2V @ 2mA (Typ)
Gate Charge (Qg) (Max) @ Vgs:	98nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds:	1900pF @ 1000V
Power - Max:	250W
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Chassis Mount
Package / Case:	SP1
Supplier Device Package:	SP1

Microchip Technology APTMC120AM55CT1AG