Microchip Technology-APTMC120AM25CT3AG - Transistors - FETs, MOSFETs - Arrays Product Specifications and Latest Quotes

FET Type:	2 N-Channel (Half Bridge)
FET Feature:	Silicon Carbide (SiC)
Drain to Source Voltage (Vdss):	1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C:	113A (Tc)
Rds On (Max) @ Id, Vgs:	25mOhm @ 80A, 20V
Vgs(th) (Max) @ Id:	2.2V @ 4mA (Typ)
Gate Charge (Qg) (Max) @ Vgs:	197nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds:	3800pF @ 1000V
Power - Max:	500W
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Chassis Mount
Package / Case:	SP3
Supplier Device Package:	SP3

Microchip Technology APTMC120AM25CT3AG