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APTMC120AM08CD3AG
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Microchip Technology APTMC120AM08CD3AG

Manufacturer No:
APTMC120AM08CD3AG
Manufacturer:
Microchip Technology
Package:
Bulk
Datasheet:
APTMC120AM08CD3AG Datasheet
ECAD Model:
-
Description:
MOSFET 2N-CH 1200V 250A D3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:2 N-Channel (Half Bridge)
FET Feature:Silicon Carbide (SiC)
Drain to Source Voltage (Vdss):1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C:250A (Tc)
Rds On (Max) @ Id, Vgs:10mOhm @ 200A, 20V
Vgs(th) (Max) @ Id:2.2V @ 10mA (Typ)
Gate Charge (Qg) (Max) @ Vgs:490nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds:9500pF @ 1000V
Power - Max:1100W
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Package / Case:D-3 Module
Supplier Device Package:D3
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