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APTM120H29FG
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Microchip Technology APTM120H29FG

Manufacturer No:
APTM120H29FG
Manufacturer:
Microchip Technology
Package:
Bulk
Datasheet:
APTM120H29FG Datasheet
ECAD Model:
-
Description:
MOSFET 4N-CH 1200V 34A SP6
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:4 N-Channel (Half Bridge)
FET Feature:Standard
Drain to Source Voltage (Vdss):1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C:34A
Rds On (Max) @ Id, Vgs:348mOhm @ 17A, 10V
Vgs(th) (Max) @ Id:5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs:374nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:10300pF @ 25V
Power - Max:780W
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Package / Case:SP6
Supplier Device Package:SP6
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In Stock

$385.01
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