Microchip Technology-APTM120H29FG - Transistors - FETs, MOSFETs - Arrays Product Specifications and Latest Quotes

FET Type:	4 N-Channel (Half Bridge)
FET Feature:	Standard
Drain to Source Voltage (Vdss):	1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C:	34A
Rds On (Max) @ Id, Vgs:	348mOhm @ 17A, 10V
Vgs(th) (Max) @ Id:	5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs:	374nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:	10300pF @ 25V
Power - Max:	780W
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Chassis Mount
Package / Case:	SP6
Supplier Device Package:	SP6

Microchip Technology APTM120H29FG