Microchip Technology-APTM10UM01FAG - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	100 V
Current - Continuous Drain (Id) @ 25°C:	860A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	1.6mOhm @ 275A, 10V
Vgs(th) (Max) @ Id:	4V @ 12mA
Gate Charge (Qg) (Max) @ Vgs:	2100 nC @ 10 V
Vgs (Max):	±30V
Input Capacitance (Ciss) (Max) @ Vds:	60000 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	2500W (Tc)
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Chassis Mount
Supplier Device Package:	SP6
Package / Case:	SP6

Microchip Technology APTM10UM01FAG