Microchip Technology-APTM10HM19FT3G - Transistors - FETs, MOSFETs - Arrays Product Specifications and Latest Quotes

FET Type:	4 N-Channel (Half Bridge)
FET Feature:	Standard
Drain to Source Voltage (Vdss):	100V
Current - Continuous Drain (Id) @ 25°C:	70A
Rds On (Max) @ Id, Vgs:	21mOhm @ 35A, 10V
Vgs(th) (Max) @ Id:	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	200nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:	5100pF @ 25V
Power - Max:	208W
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Chassis Mount
Package / Case:	SP3
Supplier Device Package:	SP3

Microchip Technology APTM10HM19FT3G