Microchip Technology-APTGTQ100A65T1G - Transistors - IGBTs - Modules Product Specifications and Latest Quotes

IGBT Type:	-
Configuration:	Half Bridge
Voltage - Collector Emitter Breakdown (Max):	650 V
Current - Collector (Ic) (Max):	100 A
Power - Max:	250 W
Vce(on) (Max) @ Vge, Ic:	2.2V @ 15V, 100A
Current - Collector Cutoff (Max):	100 µA
Input Capacitance (Cies) @ Vce:	6 nF @ 25 V
Input:	Standard
NTC Thermistor:	Yes
Operating Temperature:	-40°C ~ 175°C (TJ)
Mounting Type:	Chassis Mount
Package / Case:	Module
Supplier Device Package:	SP1

Microchip Technology APTGTQ100A65T1G