Microchip Technology-APTGF50DH60T1G - Transistors - IGBTs - Modules Product Specifications and Latest Quotes

IGBT Type:	NPT
Configuration:	Asymmetrical Bridge
Voltage - Collector Emitter Breakdown (Max):	600 V
Current - Collector (Ic) (Max):	65 A
Power - Max:	250 W
Vce(on) (Max) @ Vge, Ic:	2.45V @ 15V, 50A
Current - Collector Cutoff (Max):	250 µA
Input Capacitance (Cies) @ Vce:	2.2 nF @ 25 V
Input:	Standard
NTC Thermistor:	Yes
Operating Temperature:	-
Mounting Type:	Chassis Mount
Package / Case:	SP1
Supplier Device Package:	SP1

Microchip Technology APTGF50DH60T1G