APT9M100B
  • Share:

Microchip Technology APT9M100B

Manufacturer No:
APT9M100B
Manufacturer:
Microchip Technology
Package:
Tube
Datasheet:
APT9M100B Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 1000V 9A TO247
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1000 V
Current - Continuous Drain (Id) @ 25°C:9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.4Ohm @ 5A, 10V
Vgs(th) (Max) @ Id:5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:80 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:2605 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):335W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247 [B]
Package / Case:TO-247-3
0 Remaining View Similar

In Stock

$4.46
103

Please send RFQ , we will respond immediately.

Similar Products

Part Number APT9M100B APT9M100S   APT8M100B   APT9F100B  
Manufacturer Microchip Technology Microchip Technology Microchip Technology Microchip Technology
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V 1000 V 1000 V 1000 V
Current - Continuous Drain (Id) @ 25°C 9A (Tc) 9A (Tc) 8A (Tc) 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 1.4Ohm @ 5A, 10V 1.4Ohm @ 5A, 10V 1.8Ohm @ 4A, 10V 1.6Ohm @ 5A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA 5V @ 1mA 5V @ 1mA 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 80 nC @ 10 V 80 nC @ 10 V 60 nC @ 10 V 80 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 2605 pF @ 25 V 2605 pF @ 25 V 1885 pF @ 25 V 2606 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 335W (Tc) 335W (Tc) 290W (Tc) 337W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Surface Mount Through Hole Through Hole
Supplier Device Package TO-247 [B] D3PAK TO-247 [B] TO-247 [B]
Package / Case TO-247-3 TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-247-3 TO-247-3

Related Product By Categories

PJQ5443_R2_00001
PJQ5443_R2_00001
Panjit International Inc.
40V P-CHANNEL ENHANCEMENT MODE M
SPP24N60C3XKSA1
SPP24N60C3XKSA1
Infineon Technologies
MOSFET N-CH 650V 24.3A TO220-3
IXTA1N100P
IXTA1N100P
IXYS
MOSFET N-CH 1000V 1A TO263
FDP5N60NZ
FDP5N60NZ
Fairchild Semiconductor
MOSFET N-CH 600V 4.5A TO220-3
IRF7425TRPBF
IRF7425TRPBF
Infineon Technologies
MOSFET P-CH 20V 15A 8SO
TK11S10N1L,LXHQ
TK11S10N1L,LXHQ
Toshiba Semiconductor and Storage
MOSFET N-CH 100V 11A DPAK
STL60P4LLF6
STL60P4LLF6
STMicroelectronics
MOSFET P-CH 40V 60A POWERFLAT
MMBF170LT1
MMBF170LT1
onsemi
MOSFET N-CH 60V 500MA SOT23-3
IRL2203NSTRRPBF
IRL2203NSTRRPBF
Infineon Technologies
MOSFET N-CH 30V 116A D2PAK
NTB75N03-6T4G
NTB75N03-6T4G
onsemi
MOSFET N-CH 30V 75A D2PAK
TSM210N06CZ C0G
TSM210N06CZ C0G
Taiwan Semiconductor Corporation
MOSFET N-CHANNEL 60V 210A TO220
RVQ040N05HZGTR
RVQ040N05HZGTR
Rohm Semiconductor
MOSFET N-CH 45V 4A TSMT6

Related Product By Brand

MASMLJ120A
MASMLJ120A
Microchip Technology
TVS DIODE 120VWM 193VC DO214AB
MA5KP7.5CA
MA5KP7.5CA
Microchip Technology
TVS DIODE 7.5VWM 12.9VC DO204AR
M15KP33CA
M15KP33CA
Microchip Technology
TVS DIODE 33VWM 54.8VC DO204AR
DSC1001CE1-037.1250
DSC1001CE1-037.1250
Microchip Technology
MEMS OSC XO 37.1250MHZ CMOS SMD
SW500008
SW500008
Microchip Technology
PICC-18 STD
JAN1N977D-1
JAN1N977D-1
Microchip Technology
DIODE ZENER 47V 500MW DO35
JAN1N4118D-1
JAN1N4118D-1
Microchip Technology
DIODE ZENER 27V DO35
JANTXV1N4617-1
JANTXV1N4617-1
Microchip Technology
DIODE ZENER 2.4V 500MW DO35
MCP3001-I/ST
MCP3001-I/ST
Microchip Technology
IC ADC 10BIT SAR 8TSSOP
MCP41HV31T-502E/ST
MCP41HV31T-502E/ST
Microchip Technology
IC DGTL POT 5KOHM 128TAP 14TSSOP
QT60645-AS
QT60645-AS
Microchip Technology
SENSOR IC MTRX TOUCH64KEY 44TQFP
AT34C02D-SSHM-T
AT34C02D-SSHM-T
Microchip Technology
IC EEPROM 2KBIT I2C 1MHZ 8SOIC