Microchip Technology-APT64GA90B2D30 - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	PT
Voltage - Collector Emitter Breakdown (Max):	900 V
Current - Collector (Ic) (Max):	117 A
Current - Collector Pulsed (Icm):	193 A
Vce(on) (Max) @ Vge, Ic:	3.1V @ 15V, 38A
Power - Max:	500 W
Switching Energy:	1192µJ (on), 1088µJ (off)
Input Type:	Standard
Gate Charge:	162 nC
Td (on/off) @ 25°C:	18ns/131ns
Test Condition:	600V, 38A, 4.7Ohm, 15V
Reverse Recovery Time (trr):	-
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-247-3 Variant
Supplier Device Package:	-

Microchip Technology APT64GA90B2D30