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| Part Number | APT58M50J | APT58M80J | APT58MJ50J | APT51M50J | APT58F50J |
|---|---|---|---|---|---|
| Manufacturer | Microchip Technology | Microchip Technology | Microsemi Corporation | Microchip Technology | Microchip Technology |
| Product Status | Active | Active | Active | Active | Active |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500 V | 800 V | 500 V | 500 V | 500 V |
| Current - Continuous Drain (Id) @ 25°C | 58A (Tc) | 60A (Tc) | 58A (Tc) | 51A (Tc) | 58A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 42A, 10V | 110mOhm @ 43A, 10V | 65mOhm @ 42A, 10V | 75mOhm @ 37A, 10V | 65mOhm @ 42A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA | 5V @ 5mA | 5V @ 2.5mA | 5V @ 2.5mA | 5V @ 2.5mA |
| Gate Charge (Qg) (Max) @ Vgs | 340 nC @ 10 V | 570 nC @ 10 V | 340 nC @ 10 V | 290 nC @ 10 V | 340 nC @ 10 V |
| Vgs (Max) | ±30V | ±30V | ±30V | ±30V | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 13500 pF @ 25 V | 17550 pF @ 25 V | 13500 pF @ 25 V | 11600 pF @ 25 V | 13500 pF @ 25 V |
| FET Feature | - | - | - | - | - |
| Power Dissipation (Max) | 540W (Tc) | 960W (Tc) | 540W (Tc) | 480W (Tc) | 540W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount | Chassis Mount | Chassis Mount | Chassis Mount | Chassis Mount |
| Supplier Device Package | ISOTOP® | SOT-227 | ISOTOP® | ISOTOP® | ISOTOP® |
| Package / Case | SOT-227-4, miniBLOC | SOT-227-4, miniBLOC | SOT-227-4, miniBLOC | SOT-227-4, miniBLOC | SOT-227-4, miniBLOC |
