APT56M50B2
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Microchip Technology APT56M50B2

Manufacturer No:
APT56M50B2
Manufacturer:
Microchip Technology
Package:
Tube
Datasheet:
APT56M50B2 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 500V 56A T-MAX
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:56A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:100mOhm @ 28A, 10V
Vgs(th) (Max) @ Id:5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs:220 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:8800 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):780W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:T-MAX™
Package / Case:TO-247-3 Variant
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Similar Products

Part Number APT56M50B2 APT56M60B2   APT56F50B2  
Manufacturer Microchip Technology Microchip Technology Microchip Technology
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 600 V 500 V
Current - Continuous Drain (Id) @ 25°C 56A (Tc) 60A (Tc) 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 100mOhm @ 28A, 10V 130mOhm @ 28A, 10V 100mOhm @ 28A, 10V
Vgs(th) (Max) @ Id 5V @ 2.5mA 5V @ 2.5mA 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs 220 nC @ 10 V 280 nC @ 10 V 220 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 8800 pF @ 25 V 11300 pF @ 25 V 8800 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 780W (Tc) 1040W (Tc) 780W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package T-MAX™ TO-247 [B] T-MAX™ [B2]
Package / Case TO-247-3 Variant TO-247-3 Variant TO-247-3 Variant

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