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| Part Number | APT56F50B2 | APT56M50B2 | APT56F60B2 |
|---|---|---|---|
| Manufacturer | Microchip Technology | Microchip Technology | Microchip Technology |
| Product Status | Active | Active | Active |
| FET Type | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500 V | 500 V | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 56A (Tc) | 56A (Tc) | 60A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 28A, 10V | 100mOhm @ 28A, 10V | 110mOhm @ 28A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA | 5V @ 2.5mA | 5V @ 2.5mA |
| Gate Charge (Qg) (Max) @ Vgs | 220 nC @ 10 V | 220 nC @ 10 V | 280 nC @ 10 V |
| Vgs (Max) | ±30V | ±30V | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 8800 pF @ 25 V | 8800 pF @ 25 V | 11300 pF @ 25 V |
| FET Feature | - | - | - |
| Power Dissipation (Max) | 780W (Tc) | 780W (Tc) | 1040W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole | Through Hole | Through Hole |
| Supplier Device Package | T-MAX™ [B2] | T-MAX™ | T-MAX™ [B2] |
| Package / Case | TO-247-3 Variant | TO-247-3 Variant | TO-247-3 Variant |
