APT5010JVRU3
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Microchip Technology APT5010JVRU3

Manufacturer No:
APT5010JVRU3
Manufacturer:
Microchip Technology
Package:
Bulk
Datasheet:
APT5010JVRU3 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 500V 44A SOT227
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:44A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:100mOhm @ 22A, 10V
Vgs(th) (Max) @ Id:4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs:312 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:7410 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):450W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Supplier Device Package:SOT-227
Package / Case:SOT-227-4, miniBLOC
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$34.59
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Similar Products

Part Number APT5010JVRU3 APT5010JVRU2  
Manufacturer Microchip Technology Microchip Technology
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V
Current - Continuous Drain (Id) @ 25°C 44A (Tc) 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 100mOhm @ 22A, 10V 100mOhm @ 22A, 10V
Vgs(th) (Max) @ Id 4V @ 2.5mA 4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs 312 nC @ 10 V 312 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 7410 pF @ 25 V 7410 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 450W (Tc) 450W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Chassis Mount Chassis Mount
Supplier Device Package SOT-227 SOT-227
Package / Case SOT-227-4, miniBLOC SOT-227-4, miniBLOC

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