Microchip Technology-APT35GN120L2DQ2G - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	NPT, Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):	1200 V
Current - Collector (Ic) (Max):	94 A
Current - Collector Pulsed (Icm):	105 A
Vce(on) (Max) @ Vge, Ic:	2.1V @ 15V, 35A
Power - Max:	379 W
Switching Energy:	2.315mJ (off)
Input Type:	Standard
Gate Charge:	220 nC
Td (on/off) @ 25°C:	24ns/300ns
Test Condition:	800V, 35A, 2.2Ohm, 15V
Reverse Recovery Time (trr):	-
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-264-3, TO-264AA
Supplier Device Package:	-

Microchip Technology APT35GN120L2DQ2G