Microchip Technology-APT35GA90BD15 - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	PT
Voltage - Collector Emitter Breakdown (Max):	900 V
Current - Collector (Ic) (Max):	63 A
Current - Collector Pulsed (Icm):	105 A
Vce(on) (Max) @ Vge, Ic:	3.1V @ 15V, 18A
Power - Max:	290 W
Switching Energy:	642µJ (on), 382µJ (off)
Input Type:	Standard
Gate Charge:	84 nC
Td (on/off) @ 25°C:	12ns/104ns
Test Condition:	600V, 18A, 10Ohm, 15V
Reverse Recovery Time (trr):	-
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-247-3
Supplier Device Package:	TO-247 [B]

Microchip Technology APT35GA90BD15