Microchip Technology-APT33GF120LRDQ2G - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	NPT
Voltage - Collector Emitter Breakdown (Max):	1200 V
Current - Collector (Ic) (Max):	64 A
Current - Collector Pulsed (Icm):	75 A
Vce(on) (Max) @ Vge, Ic:	3V @ 15V, 25A
Power - Max:	357 W
Switching Energy:	1.315mJ (on), 1.515mJ (off)
Input Type:	Standard
Gate Charge:	170 nC
Td (on/off) @ 25°C:	14ns/185ns
Test Condition:	800V, 25A, 4.3Ohm, 15V
Reverse Recovery Time (trr):	-
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-264-3, TO-264AA
Supplier Device Package:	TO-264 [L]

Microchip Technology APT33GF120LRDQ2G