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Discrete Semiconductor Products
Transistors - FETs, MOSFETs - Single
APT29F100B2
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Microchip Technology APT29F100B2
Manufacturer No:
APT29F100B2
Manufacturer:
Microchip Technology
Package:
Tube
Datasheet:
APT29F100B2 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 1000V 30A T-MAX
Delivery:
Payment:
Product Attributes
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
1000 V
Current - Continuous Drain (Id) @ 25°C:
30A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
440mOhm @ 16A, 10V
Vgs(th) (Max) @ Id:
5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs:
260 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
8500 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
1040W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Through Hole
Supplier Device Package:
T-MAX™ [B2]
Package / Case:
TO-247-3 Variant
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UnitPrice:
$19.14
Quantity:
13
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