Microchip Technology-APT25GP120BDQ1G - Transistors - IGBTs - Single Product Specifications and Latest Quotes

IGBT Type:	PT
Voltage - Collector Emitter Breakdown (Max):	1200 V
Current - Collector (Ic) (Max):	69 A
Current - Collector Pulsed (Icm):	90 A
Vce(on) (Max) @ Vge, Ic:	3.9V @ 15V, 25A
Power - Max:	417 W
Switching Energy:	500µJ (on), 440µJ (off)
Input Type:	Standard
Gate Charge:	110 nC
Td (on/off) @ 25°C:	12ns/70ns
Test Condition:	600V, 25A, 5Ohm, 15V
Reverse Recovery Time (trr):	-
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-247-3
Supplier Device Package:	TO-247 [B]

Microchip Technology APT25GP120BDQ1G